[A-6-3] A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO2 Gate Dielectrics

Koji Eriguchi, Masayuki Kamei, Daisuke Hamada, Kenji Okada, Kouichi Ono (1.Graduate School of Engineering, Kyoto University, 2.MIRAI-AIST)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Suppression of Gate-Edge Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer and its Impact on Scaled MOSFETs

N. Mise, T. Matsuki, T. Watanabe, T. Robata, T. Morooka, T. Eimori, Y. Nara (1.Semiconductor Leading Edge Technologies, Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-7-1] Schottky Barrier and Stability of Metal/High-k Interfaces; Theoretical View

Takashi Nakayama (1.Department of Physics, Chiba University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Anomalous positive Vfb shift in HfAlOx MOS gate stacks

Wenwu Wang, Koji Akiyama, Wataru Mizubayashi, Minoru Ikeda, Hiroyuki Ota, Toshihide Nabatame, Akira Toriumi (1.MIRAI-ASRC, 2.MIRAI-ASET, 3.The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] Effect of Ultra-thin Al2O3 Insertion on Fermi-level Pinning at Metal/Ge Interface

Tomonori Nishimura, Koji Kita, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-7-4] Systematic studies on Fermi level pining of Hf-based high-k gate stacks

K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada (1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 2.CREST, Japan Science and Technology Agency, 3.Semiconductor Leading Edge Technology Inc., 4.Graduate School of Engineering, Osaka University, 5.Nanotechnology Research Laboratories, Waseda University, 6.National Institute of Materials Science, 7.Present address: Tokyo Electron Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86 nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique

Dai Ishikawa, Satoshi Kamiyama, Atsushi Sano, Sadayoshi Horii, Takayuki Aoyama, Yasuo Nara (1.Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 2.Research Dept. 2, Semiconductor Equipment System Lab., Hitachi Kokusai Electric Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-8-2] Tinv Scaling and Jg Reducing for nMOSFET with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone Water Treatment Process

I. Oshiyama, K. Tai, T. Hirano, S. Yamaguchi, K. Tanaka, Y. Hagimoto, T. Uemura, T. Ando, K. Watanabe, R. Yamamoto, S. Kanda, J. Wang, Y. Tateshita, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, M. Oshima, S. Toyoda, N. Nagashima, S. Kadomura (1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 2.Graduate School of Engineering, University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-8-3] Highly Manufacturable CMOSFETs with Single High-k (HfLaO) and Dual Metal Gate Integration Process

X.P. Wang, M.-F. Li, H.Y. Yu, J.J. Yang, C.X. Zhu, W.S. Hwang, W.Y. Loh, A.Y. Du, J.D. Chen, Albert Chin, S. Biesemans, G.Q. Lo, D.-L. Kwong (1.SNDL, ECE Dept, National University of Singapore, 2.Institute of Microelectronics, Singapore, 3.IMEC, 4.Dept. of Microelectronics, Fudan University, 5.Dept. of Electronics Eng., Nat’l Chiao-Tung Univ.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-8-4] Highly Manufacturable and Cost-effective Single TaxC / HfxZr(1-x)O2 Gate CMOS Bulk Platform for LP Applications at the 45nm Node and Beyond

M. Muller, C. Hobbs, A. Zauner, S. Barnola, T. Salvetat, S. Lhostis, S. Couderc, P. Perreau, D. H. Triyoso, M. Raymond, E. Luckowski, M. Rafik, A. Cathignol, G. Ribes, D. Fleury, K. Romanjek, S. Pokrant, S. Jullian, P. Morin, M. Aminpur, P. Gouraud, C. Laviron, S. Zoll, P. Garnier, F. Salvetti (1.NXP Semiconductors, 2.Freescale, 3.STMicroelectronics, 4.NXP Semiconductors, Research, 5.CEA-LETI, 6.Freescale Semiconductor Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download