[J-1-5] The Effect of Radical Oxidation on DRAM Cell Transistor with S-RCAT

Se Geun Park, Sung Hak Joe, Ji Hye Kim, Hyun Seung Song, Ik Don Choi, Sang Hyun Han, Yong Suk Ahn, Soon Byoung Park, Jong Sup Lee, Se Nyoung Kim, Won Taek Choi, Ki Jun Kim, Kyoung Seok Oh (1.Sam-Sung Electronic Corporation, DRAM Process Architecture Team)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-2-1] 3D Device Stacking Technology for Future Memory

Soon-Moon Jung (1.R&D center, Memory division, Semiconductor business, Samsung Electronics Co. Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-2-2] Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 G NAND Flash

Daewoong Kang, Sungnam Jang, Kyongjoo Lee, Jinjoo Kim, Dongwon Chang, Hyukje Kwon, Wonseong Lee, Il Han Park, Jun Su Kim, Jae Hong Lee, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin (1.School of Electrical Engineering, Seoul National University, 2.SRAM/FLASH PA Team, Memory Business, Samsung Electronics Co., Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-2-3] Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers

S. Maikap, P. J. Tzeng, T. Y. Wang, H. Y. Lee, C. H. Lin, S. C. Lo, L. S. Lee, J. R. Yang, M.-J. Kao, M.-J. Tsai (1.Department of Electronic Engineering, Chang Gung University, 2.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 3.Department of Material Science Engineering, National Taiwan University, 4.Material Research Laboratories, Industrial Technology Research Institute, 5.Corresponding author:)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-2-4] Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot

Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (1.International Advanced Research and Education Organization, Tohoku University, 2.Dept. of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-3-1] 2-bit/cell Characteristics of High-Density and High-Performance SONOS Flash Memory Cell with Recessed Channel Structure

Kyoung-Rok Han, Young Min Kim, Ki-Heung Park, Sang-Goo Jung, Byung-Kil Choi, Jong-Ho Lee (1.School of Electrical Engineering and Computer Science, Kyungpook National Univ.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-3-2] ESR and PL Study of Charge Trapping Centers in Silicon Nitride Films and Its Verification with Novel ONO-Sidewall 2-bit/cell Nonvolatile Memory

Atsushi Toki, Noriaki Shinohara, Masayuki Nakano, Hiroshi Kotaki, Yoshiaki Kamigaki (1.Kagawa University, Dept. of Advanced Materials Science, Faculty of Engineering, 2.Sharp Corporation, Corporate Research and Development Group)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-3-3] ONO Thickness Dependency of Complementary Bit Disturb in SONOS-type Nonvolatile Memory

K. Kikuchi (1.Spansion Japan Limited)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-3-4] Ramping Amplitude Multi-Frequency Charge Pumping Technique for Silicon-Oxide-Nirtride-Oxide-Silicon Flash EEPROM Cell Transistors

Won-Ho Choi, Han-Soo Joo, In-Shik Han, Sung-Soo Park, Hyuk-Min Kwon, Tae-Gyu Goo, Ook-Sang Yoo, Min-Ki Na, Jae-Chul Om, Seaung-Suk Lee, Gi-Hyun Bae, Hi-Deok Lee, Ga-Won Lee (1.Dept. of Electronics Engineering, Chungnam National University, 2.Mobile & FLASH Division, Hynix Semiconductor Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-5-1] Current Status and Future View of Phase Change Memory

Yuichi Matsui (1.Hitachi, Ltd., Research & Development Group)

2007 International Conference on Solid State Devices and Materials |PDF Download