[P-1-27L] In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (1.Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-1] Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric

Azumi Itoh, Atsutoshi Inokuchi, Seiji Yasuda, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.ZEON CORPORATION, 3.TOKYO ELECTRON LTD.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-2] The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization

Hiraku Ishikawa, Toshihisa Nozawa, Takaaki Matsuoka, Akinobu Teramoto, Masaki Hirayama, Takashi Ito, Tadahiro Ohmi (1.TOKYO ELECTRON LTD., 2.New Industry Creation Hatchery Center, Tohoku University, 3.Graduate School of Engineering, Tohoku University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-3] Effects of vapor phase transport synthesis on the properties of porous silica films

Y. Cho, T. Seo, K. Kohmura, T. Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Mitsui Chemicals, Inc. Catalyst Science Laboratory Heterogeneous Catalysis Group)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-4] Integration of MIM Capacitors on BCB with Thin-Film MCM-D Technology

Jimin Maeng, Sangsub Song, Chan-Sei Yoo, Heeseok Lee, Kwangseok Seo (1.Seoul National University, Department of Electrical Engineering, 2.Semiconductor Business, Samsung Electronics Company Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-5] Novel Ta-precursors for the CVD and ALD of TaNx diffusion barrier layers

Michael Pokoj, Igor Nemeth, Kerstin Volz, Daniel Gaess, Alexei Merkoulov, Jorg Sundermeyer, Wolfgang Stolz (1.Material Sciences Center and Department of Physics and Chemistry)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-6] Enhanced Thermal Stability of Nickel Germanide with Ultrathin Ti Layer

Shiyang Zhu, M. B. Yu, G. Q. Lo, D. L. Kwong (1.Semiconductor Process Technology, Institute of Microelectronics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-7] Characterization of Strain in Si for High Performance MOSFETs

Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Atsushi Ogura, Masayuki Kohno, Tatsuo Nishita, Toshio Nakanisi (1.School of Science and Technology, Meiji University, 2.TOKYO ELECTRON AT, SPA Development Engineering Dept.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-8] Raman Spectroscopic Study for Determining Stress Component in Single Crystal Silicon Microstructure using Multivariate Analysis

Nobuyuki Naka, Shinsuke Kashiwagi, Yuji Nagai, Takahiro Namazu, Shozo Inoue, Kunio Ohtsuki (1.Semiconductor Systems R&D Department, HORIBA, Ltd., 2.Department of Mechanical and System Engineering, University of Hyogo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-2-9] Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy

Xing Wu, Junichi Uchikoshi, Takaaki Hirokane, Ryuta Yamada, Kenta Arima, Mizuho Morita (1.Department of Precision Science and Technology, School of Engineering, Osaka University, 2.School of Electronics and Information Engineering, Xi’an Jiaotong University)

2007 International Conference on Solid State Devices and Materials |PDF Download

591 results (421 - 430)

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