[B-7-2] In-situ Doped Embedded-SiGe Source/Drain Technique for 32 nm-node pMOSFET

H. Okamoto, A. Hokazono, K. Adachi, N. Yasutake, H. Itokawa, S. Okamoto, M. Kondo, H. Tsujii, T. Ishida, N. Aoki, M. Fujiwara, S. Kawanaka, A. Azuma, Y. Toyoshima (1.Process & Manufacturing Engineering Center, 2.System LSI Division, Toshiba Corporation Semiconductor Company)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Principal Guideline of Stress Design for Ion Enhancement in Advanced MOSFET Structure with Dual Stress Liner Technique

M. Nishikawa, H. Nomura, T. Miyashita, M. Kojima, Y. Takao, K. Hashimoto (1.Fujitsu Limited, 2.Fujitsu Laboratories Limited)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process

Tomohiro Yamashita, Yukio Nishida, Takeshi Okagaki, Yoshihiro Miyagawa, Jiro Yugami, Hidekazu Oda, Yasuo Inoue, Kentaro Shibahara (1.Process Technology Development Div., Renesas Technology Corp., 2.Graduate School of Advanced Sciences of Matter, Hiroshima University, 3.Research Center for Nanodevices and Systems, Hiroshima University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-7-5] Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology

Tsung-Yang Liow, Rinus T. P. Lee, Kian-Ming Tan, Ming Zhu, Keat-Mun Hoe, Ganesh S. Samudra, N. Balasubramanian, Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical & Computer Engineering, National University of Singapore (NUS), 2.Institute of Microelectronics (IME))

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors

Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono (1.Research Institute of Electronics, Shizuoka University, 2.NTT Basic Research Laboratories, NTT Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-8-2] Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs

H. Tsujii, A. Hokazono, M. Fujiwara, S. Kawanaka, A. Azuma, N. Aoki, Y. Toyoshima (1.Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Two-step Inverse Modeling for Estimation of Channel Impurity Pile-up

Toshiharu Nagumo, Kiyoshi Takeuchi, Yutaka Akiyama, Masami Hane (1.Device Platforms Research Laboratories, NEC Corporation, 2.Advanced Device Development Division, NEC Electronics Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16nm Bulk FinFETs

Yiming Li, Chih-Hong Hwang, Hsuan-Ming Huang, Ta-Ching Yeh (1.Department of Communication Engineering, National Chiao Tung University, 2.Corresponding author.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-8-5L] A Novel Embedded Extension SiGe (e2SiGe) Process for PFET Performance Enhancement for 45nm Technology and beyond

L. W. Teo, H. Utomo, S. S. Tan, S. Y. Ong, C.W. Lai, Z. Luo, S.D. Kim, R. Stierstorfer, S. Mishra, H. Zhuang, C.W. Yap, Y. Zhang, J.-P. Han, R. Lipton, J. Li, G. Chiulli, J.C. Kim, B.F. Phoong, M. Eller, X. Wu, Y.M. Lee, N. Rovedo, R. Wise, H. Shang, H. Ng, J. Sudijono (1.Chartered Semiconductor Manufacturing Ltd, 2.IBM System and Technology Group, 3.Infineon Technologies, 4.Samsung Electronics Co. Ltd, 5.Alliances at IBM Semiconductor Research and Development Center (SRDC))

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-8-6L] Role of Source/Drain Electrodes in Ballistic Transport

Kenji Natori (1.University of Tsukuba, Institute of Applied Physics)

2007 International Conference on Solid State Devices and Materials |PDF Download