[B-9-1] Wide-Range Vth Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode

T. Ishigaki, R. Tsuchiya, Y. Morita, N. Sugii, S. Kimura, T. Iwamatsu, T. Ipposhi, Y. Inoue, T. Hiramoto (1.Central Research Laboratory, Hitachi, Ltd., 2.Renesas Technology Corp., 3.Institute of Industrial Science, Univ. of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Additivity between sSOI- and CESL-induced nMOSFETs Performance Boosts

F. Andrieu, F. Allain, C. Buj-Dufournet, O. Faynot, F. Rochette, M. Casse, V. Delaye, F. Aussenac, L. Tosti, P. Maury, L. Vandroux, N. Daval, I. Cayrefourcq, S. Deleonibus (1.CEA-LETI MINATEC, 2.SOITEC, Parc technologique des Fontaines)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] Novel Extended-Pi Shaped Silicon-Germanium (eΠ-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs

Kian-Ming Tan, Tsung-Yang Liow, Rinus T. P. Lee, Ming Zhu, Keat Mun Hoe, Chih-Hang Tung, N. Balasubramanian, Ganesh S. Samudra, Yee-Chia Yeo. (1.Silicon Nano Device Lab., Dept of Electrical and Computer Engineering, National University of Singapore, 2.Institute of Microelectronics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs

Toyoji Yamamoto, Masatomi Harada, Noriyuki Taoka, Yoshimi Yamashita, Naoharu Sugiyama, Shin-ichi Takagi (1.MIRAI-ASET, 2.MIRAI-AIST, 3.The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-9-5] A Double-Gate Tunneling Field-Effect Transistor with Silicon-Germanium Source for High-Performance, Low Standby Power, and Low Power Technology Applications

Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Dennis Sylvester, Chun-Huat Heng, Ganesh Samudra, Yee-Chia Yeo. (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore (NUS))

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-10-1] RTN Effects in Scaled Flash Memory Arrays

A. S. Spinelli, C. Monzio Compagnoni, R. Gusmeroli, M. Ghidotti, A. L. Lacaita (1.Dipartimento di Elettronica e Informazione, Politecnico di Milano)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-10-2] Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device And Its Application to CMOS Image Sensor Readout Circuit

Hochul Lee, Youngchang Yoon, Jongwook Jeon, Hyungcheol Shin (1.Seoul National Univ. Dept.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-10-3] Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-level RTS noise

Seungwon Yang, Hochul Lee, Hyungcheol Shin (1.Seoul National Univ. Dept.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-10-4] Analog Performance of Asymmetric Schottky Tunneling Source nFET for RF and Mixed- Mode Application

Ritesh Jhaveri, Jason C. S. Woo (1.Department of Electrical Engineering, University of California)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-10-5] Frequency Dependence of Measured MOSFET Distortion Characteristic

T. Minami, Y. Takeda, M. Miyake, M. Miura-Mattausch, H. J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Miyamoto (1.Graduate School of Advanced Sciences of Matter, Hiroshima University, 2.Semiconductor Technology Academic Research Center)

2007 International Conference on Solid State Devices and Materials |PDF Download