[F-2-4] Defect Passivation by Hydrogen in Zinc Oxide Films Grown by MOCVD

Jungyol Jo, Ogweon Seo, Hyoshik Choi, Byeonggon Lee (1.Department of Electrical and Computer Engineering, Ajou University, 2.NFC, Samsung Advanced Institute of Technology, 3.CDA Co., Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-2-5] Development of the multi-scale simulator for the dye-sensitized TiO2 nanoporous electrode based on quantum chemical calculation

Kei Ogiya, Chen Lv, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Akira Miyamoto (1.Depertment of Applied Chemistry, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-3-1] Fabrication of 3-D Silicon Micro Probes for Neural Recording Using Multi-Step VLS Growth

A. Ikedo, N. Funagayama, T. Kawashima, H. Takao, K. Sawada, M. Ishida (1.Dept. of Electrical and Electronic Engineering, Toyohashi Univ. of Technology, 2.Intelligent Sensing System Research Center, Toyohashi Univ. of Technology, 3.Japan Science and Technology, CREST)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-3-2] Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels

Maksym Myronov, Kentarou Sawano, Kohei M. Itoh, Yasuhiro Shiraki (1.Musashi Institute of Technology, Advanced Research Laboratories, 2.Keio University, Dept. of Applied Physics and Physico-Imformatics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-3-3] Pulsed Laser Irradiation of Silicon-Germanium-on-Insulator (Si0.17Ge0.83OI) Substrates for Strain Relaxation and Defect Reduction

Grace Huiqi Wang, Eng-Huat Toh, Xincai Wang, Keat-Mun Hoe, S. Tripathy, Guo-Qiang Lo, Ganesh Samudra, Yee-Chia Yeo. (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore (NUS), 2.Institute of Microelectronics (IME), Institute of Manufacturing Technology (SIMTECH))

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-3-4] Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy

Hiroaki Hanafusa, Yoshiyuki Suda, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2.National Inst. of Information and Communications Technology)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-3-5] A Novel Approach to Fabricate ～120 nm Thick Fully Relaxed Ge-on-Insulator

S. Balakumar, K.M. Hoe, W. Tang, Y.L. Foo, S. Tripathy, C.H. Tung, G.Q. Lo, N. Balasubramanian, D.L. Kwong (1.Institute of Microelectronics, 2.Institute of Materials Research and Engineering)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-3-6L] New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe

Haruko Akutsu, Hiroshi Uchida, Kazuhiko Nakamura, Toshihiko Iinuma, Kyoichi Suguro (1.TOSHIBA Corporation Semiconductor Company, 2.Toshiba Nanoanalysis Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-5-1] Bottom-up approach for the nanopatterning of Si(001)

R. Koch (1.Institut fur Halbleiter- und Festkorperphysik, Johannes Kepler Universitat)

2007 International Conference on Solid State Devices and Materials |PDF Download

[F-5-2] Plasma Deposition of HfO2 and TiO2 onto Plasma-Nitrided Ge Surfaces

Sanghyun Lee, Gerald Lucovsky, Joseph P. Long, Jan. Luning (1.Department of Physics, North Carolina State University, 2.Stanford Synchrotron Radiation Laboratory (SSRL))

2007 International Conference on Solid State Devices and Materials |PDF Download