[A-2-6] Effects of Sulfur Passivation on Ge MOS Capacitors with High-k Gate Dielectric

Ruilong Xie, Chunxiang Zhu (1.Silicon Nano Device Lab, Dept of Electrical and Computer Engineering National University of Singapore)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates

S. Zafar, Y. H. Kim, V. Paruchuri, V. Narayanan, B. Doris, A. Callegari, J. Stathis, T. Ning (1.IBM Semiconductor Research & Development Center (SRDC), Research Division)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm

Motoyuki Sato, Kikuo Yamabe, Kenji Shiraishi, Seiichi Miyazaki, Keisaku Yamada, Chihiro Tamura, Ryu Hasunuma, Seiji Inumiya, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (1.Semiconductor Leading Edge Technologies, Inc. (Selete), 2.Univ. of Tsukuba, 3.Hiroshima Univ., 4.Waseda Univ.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs

Takashi Onizawa, Motoyuki Sato, Takayuki Aoyama, Takahisa Eimori, Yasuo Nara, Yuzuru Ohji (1.Semiconductor Leading Edge Technologies, Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2

C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G Bersuker, S.C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy (1.IBM Assignee, 2.Dept. of Materials Science and Engineering, North Carolina State University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Study of Dopant Diffusion and Defect Evolution for Advanced Ultra Shallow Junctions based on Atomistic Modeling

T. Noda, W. Vandervorst, S. Felch, V. Parihar, C. Vrancken, S. Severi, T. Y. Hoffmann, A. Falpin, B. van Daele, T. Jannssens, H. Bender, P. Eyben, M. Niwa, R. Schreutelkamp, F. Nouri, P. P. Absil, M. Jurczak, K. De Meyer, S. Biesemans (1.Matsushita Electric Industrial Co., Ltd., 2.IMEC, 3.Applied Materials)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs

Nobuyuki Ikarashi, Makiko Oshida, Makoto Miyamura, Motofumi Saitoh, Akira Mineji, Seiichi Shishiguchi (1.NEC Corporation, Device Platforms Research Laboratories, 2.NEC Electronics Corporation, Process Technology Division)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Si1-xGex/Si Selective Etch with HCl for Thin Si-Channel Transistors Integration

N. Loubet, S. Denorme, A. Pouydebasque, F. Leverd, P. Gouraud, C. Tallaron, T. Skotnicki, D. Dutartre (1.STMicroelectronics, 2.NXP Semiconductors)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Effects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs

Kyong Taek Lee, Chang Yong Kang, Rino Choi, Seung Chul Song, Byoung Hun Lee, Hi-Deok Lee, Yoon-Ha Jeong (1.Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), 2.SEMATECH, 3.IBM assignee, 4.Dept. of Electronics Engineering, Chungnam National Univ, Korea, 5.University of Texas at Austin)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET

Minseok Jo, Hokyung Park, Man Chang, Hyung-Suk Jung, Jong-Ho Lee, Hyunsang Hwang (1.Gwangju Institute of Science and Technology, 2.Advanced process Development Team, System LSI Division, Samsung Electronics Company, Ltd., Korea.)

2007 International Conference on Solid State Devices and Materials |PDF Download