[B-1-6] New Observations on the Narrow Width Effect of the Hot Carrier and NBTI Reliabilities in pMOSFETs with Various Types of Strains

S. S. Chung, D. C. Huang, C. S. Lai, C. H. Tsai, P. W. Liu, Y. H. Lin, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun (1.Department of Electronic Engineering, National Chiao Tung University, Taiwan, 2.Chang-Gung University, Taiwan, 3.United Microelectronics Corporation (UMC), Central R&D Division, Taiwan)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime

R. Clerc, Q. Rafhay, M. Ferrier, P. Palestri, G. Ghibaudo, L. Selmi (1.IMEP, Minatec-INPG, 2.DIEGM, University of Udine)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs

Hideaki Tsuchiya, Shin-ichi Takagi (1.Kobe University, Graduate School of Engineering, 2.MIRAI-ASRC, 3.The University of Tokyo, Graduate School of Frontier Science)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-2-3] Mobility and Backscattering in Germanium n-type Inversion Layers

Q. Rafhay, P. Palestri, D. Esseni, R. Clerc, L. Selmi (1.IMEP, Minatec-INPG, 2.DIEGM, University of Udine)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-2-4] Schottky Barrier MOSFETs as Resonant Tunneling Devices

Shuichi Toriyama, Nobuyuki Sano (1.Advanced LSI Technology Laboratory, Toshiba Corporation, 2.Institute of Applied Physics, University of Tsukuba)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-2-5] Coarse-Grain 3D Quantum Simulations of Nanoscale MOSFET

Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki (1.Osaka University, Department of Electrical, Electronic and Informatics Engineering, 2.Hiroshima University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-2-6] Multiband Simulation of Uniaxially Stressed Silicon MOSFETs Based on Non-Equilibrium Green’s Function Method

H. Fitriawan, S. Souma, M. Ogawa (1.Graduate School of Science and Technology, Kobe University, 2.Department of Electrical and Electronics Engineering, Kobe University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Low Standby Power CMOS Process Integration Scheme for 45-32 nm node

Kiyotaka Imai (1.Advanced Device Development Division, NEC Electronics Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] High Performance and Low Leakage CMOS for 45nm Low Power Technology and Beyond

J.-P. Han, Y. M. Lee, H. Utomo, R. Lindsay, M. Eller, J.C. Kim, V. Sardesai, V. Chan, S. Fang, J. Holt, T.N. Adam, H. Zhuang, W. Wille, Z. Lun, H. Wang, T. Dyer, J. Yan, O.J. Kwon, O.S. Kwon, C.W. Lai, T.J. Tang, S.S. Tan, J. Yuan, J. Li, H. Ng, H. Shang, J. Sudijono, D. Schepis, M. Ieong, Y. Li, J.H. Ku, A. Gutmann, M. Hierlemann (1.Infineon Technologies AG, 2.Chartered Semiconductor Manufacturing Limited, 3.IBM Semiconductor Research and Technology Group, 4.Samsung Elec. Co. Alliances at IBM Semiconductor Research and Development Center (SRDC))

2007 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] In-Depth Study of Two-Dimensional Layout Dependences in Multiple-Stressor CMOS for 45 nm Technology Node High-Performance Applications

T. Miyashita, J. Ogura, T. Owada, T. Sakuma, H. Nomura, H. Miyaoka, A. Hasegawa, S. Yamaguchi, S. Satoh (1.Fujitsu Laboratories Ltd., 2.Fujitsu Limited)

2007 International Conference on Solid State Devices and Materials |PDF Download