[A-1-1] Challenges for PMOS Metal Gate Electrodes and Solutions for Low Power Applications

J.K. Schaeffer, W.J. Taylor, S.B. Samavedam, D.C. Gilmer, D.H. Triyoso, R.I. Hegde, S. Kalpat, C. Capasso, M. Sadd, M. Stoker, A. Haggag, D. Roan, B.E. White Jr. (1.Silicon Technology Solutions, 2.Freescale Semiconductor)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] PMOSFET Vth Modulation Technique using Fluorine Treatment through ALD-TiN Suitable for CMOS Devices

K. Tai, S. Yamaguchi, K. Tanaka, T. Hirano, I. Oshiyama, S. Kazi, T. Ando, M. Nakata, M. Yamanaka, R. Yamamoto, S. Kanda, Y. Tateshita, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, N. Nagashima, S. Kadomura (1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method

N. Kitano, H. Arimura, S. Horie, T. Hosoi, T. Shimura, H. Watanabe, T. Kawahara, S. Sakashita, Y. Nishida, J. Yugami, T. Minami, M. Kosuda (1.Graduate School of Engineering, Osaka University, 2.Renesas Technology Corporation, 3.Canon ANELVA Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes

C. S. Park, S. C. Song, C. Burham, H. B. Park, H. Niimi, B. S. Ju, J. Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, P. Kirsch, B. H. Lee, R. Jammy (1.UT/Austin, 2.Samsung Assignee, 3.TI Assignee, 4.GIST, Korea, 5.Poongsan Microtec, 6.IBM Assignees)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Gate First PFET Poly-Si/TiN/Al2O3 Gate Stacks with Inversion Thicknesses Less than 15A for High Performance or Low Power CMOS Applications

B. P. Linder, V. Narayanan, V. K. Paruchuri, E. Cartier, S. Kanakasabapathy (1.IBM Semiconductor Research and Development Center, Research Division, 2.T. J. Watson Research Center, Yorktown Heights)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method

Hiroshi Matsubara, Hiroshi Kumagai, Satoshi Sugahara, Mitsuru Takenaka, Shin-ichi Takagi (1.Graduate School of Frontier Science, The University of Tokyo, 2.Graduate School of Science and Technology, Tokyo Institute of Technology, 3.School of Engineering, The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Direct Evidence of GeO Volatilization from GeO2 Films and Impact of Its Suppression on GeO2/Ge MIS Characteristics

Sho Suzuki, Koji Kita, Hideyuki Nomura, Tomonori Nishimura, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Experimental Evidence of Coexistence of Interface Traps Interacting with Majority and Minority Carriers in Ge MIS Structures

N. Taoka, Y. Yamashita, M. Harada, K. Ikeda, T. Yamamoto, N. Sugiyama, S. Takagi (1.MIRAI-ASRC, 2.MIRAI-ASET, 3.The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Fabrication of HfOxNy dielectrics on Ge from HfNx deposition

Tatsuro Maeda, Yukinori Morita, Shinichi Takagi (1.MIRAI, Advanced Semiconductor Research Center - National Institute of Advanced Industrial Science and Technology (ASRC-AIST), AIST Tsukuba Central 4, 2.The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Thermally Robust Germanium MIS Gate Stacks with LaYO3 Dielectric Film

Toshitake Takahashi, Yi Zhao, Tomonori Nishimura, Koji Kita, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF Download