The Japan Society of Applied Physics

591件中(441 - 450)

[P-3-7] SiGe Recessed Source-Drain (RSD) Stressors for PMOS: Effect of Device Integration Flow and Increased Ge Content on Electrical Performance

V. Machkaoutsan、P. Verheyen、P. Tomasini、G. Eneman、R. Loo、P. Absil、S.G. Thomas、J.P. Lu、J.W. Weijtmans、R. Wise (1.ASM Belgium N.V.、2.IMEC、3.ASM America Inc.、4.Catholic University of Leuven、5.Fund for scientific research Flanders、6.Texas Instruments assignee to IMEC、7.Texas Instruments)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-15] Enhanced NBTI Degradation by SMT in Short-Channel pMOSFET

Chen-Shuo Huang、Po-Tsun Liu、Peng-Soon Lim、Chi-Chun Chen、H.J. Tao、Y.J. Mii (1.Institute of Electro-Optical Engineering, National Chiao Tung University、2.Department of Photonics and Display Institute, National Chiao Tung University、3.Taiwan Semiconductor Manufacturing Company)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

591件中(441 - 450)