[PS-9-4] Electron Focusing Effect in Ballistic Graphene Cross Junction

M. Onuki¹、S. Masubuchi¹、T. Yamaguchi¹、K. Watanabe²、T. Taniguchi²、T. Machida^1,3 (1.Univ. of Tokyo、2.National Inst. of Material Science、3.Japan Sci. and Tech. Agency , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-5] Magnetic Commensurability Effect in Ballistic Graphene

S. Morikawa¹、S. Masubuchi¹、K. Iguchi¹、M. Onuki¹、T. Yamaguchi¹、M. Arai¹、K. Watanabe²、T. Taniguchi²、T. Machida^1,3 (1.Univ. of Tokyo、2.National Inst. of Material Science、3.Japan Sci. and Tech. Agency , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-6] Resistance Switching Memory Characteristics of Si/CaF₂/CdF₂ Quantum-well Structures Grown on Metal(CoSi₂) Layer

J. Denda¹、K. Uryu¹、M. Watanabe¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-7] Nanogap ReRAM based on natural aluminum oxide

T. Miyabe¹、T. Nakaoka¹ (1.Sophia Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-8] Quantum Size Effects on Phonon Transport in Ge Quantum Dot/SiO2 System

C. C. Wang¹、J. Y. Chiou¹、J. C. Hsu¹、M. T. Hung¹、H. T. Chang¹、S. W. Lee¹、P. W. Li¹ (1.National Central Univ. , Taiwan (R. O. C.))

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-9] Electron Spin Lifetime in pnpn-Structured GaAs

T. Ito¹、H. Sugata²、S. Tanigaki²、M. Ichida²、H. Ando² (1.Shizuoka Univ.、2.Konan Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-10] Spin-Canting Mediated Metallic State in Lightly Electron-Doped CaMnO₃

H. Ohnishi^1,3、S. Ishibashi^1,3、K. Terakura^1,2,3 (1.AIST、2.JAIST、3.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-11] Theoretical Examination on Significantly Low Off-State Current of a Transistor using Crystalline In-Ga-Zn Oxide

M. Murakami¹、K. Kato¹、K. Inada¹、T. Matsuzaki¹、Y. Takahashi¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-12] Silicon-based Floating-body Synaptic Transistor

H. Kim¹、J. H. Lee¹、G. Kim¹、M. C. Sun^1,2、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Corp. Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-13] Electric-field control of Mott transition in electrolyte-gated (Nd,Sm)NiO₃ thin film

S. Asanuma^1,2、P. H. Xiang^1,2、H. Yamada¹、H. Sato^1,2、I. H. Inoue^1,2、H. Akoh^1,2、A. Sawa^1,2、K. Ueno^3,4、M. Kawasaki^5,6、Y. Iwasa^5,6 (1.AIST、2.JST-CREST、3.Univ. of Tokyo、4.JST-PRESTO、5.Univ. of Tokyo、6.CERG Riken , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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