[B-2-3] Single-Poly Flash Memory with Degradation-Separated Scheme

H. W. H. Ching¹、W. Robert¹、Y. Kevin¹、L. Yen Hsin¹、B. Francis¹、C. Hsin Ming¹、Y. Evans¹ (1.eMemory Tech. Inc. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-4] A Ultra-low-voltage operation on Ultra-thin poly-Si p-channel Flash Memory with Silicon Nanocrystals

H. B. Chen¹、S. H. Lin²、J. J. Wu¹、Y. C. Wu²、C. Y. Chang¹ (1.Univ. of National Chiao Tung Univ.、2.Univ. of National Tsing Hua Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-5L] Exploring Trapped Charge Evolution in P-Channel SONOS Memory Device

F. H. Li¹、Y. Y. Chiu¹、Y. H. Lee¹、R. W. Chang¹、B. J. Yang¹、W. T. Sun²、E. Lee²、C. W. Kuo²、R. Shirota¹ (1.National Chiao Tung Univ.、2.eMemory Tech. Inc. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-1] A Process Tech. and Characterization for 20nm PRAM

B. Kim¹、Y. Song¹、H. Jeong¹、D. Ha¹、Y. Kang¹、S. Ahn¹、J. Lee¹、K. Lee¹、D. Ahn¹、S. Nam¹、G. Jeong¹、C. Chung¹ (1.Samsung Electronics Corp. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-2] Novel 2-bit Multi-level PCRAM Structure with a Triple-layered Phase Change Material Stack for High-density Storage Applications

A. Gyanathan¹、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-3] Squarness Control in Polarization-electric filed Curves in Rhombohedral PZT Films

H. Funakubo¹、A. Sumi¹、H. Morioka¹、S. Okamoto¹、S. Yokoyama¹、T. Okamoto¹、Y. Ehara¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-1] Ultra-Low Power Devices by Taking Advantages of Atom Switches with Polymer Solid-electrolyte

H. Hada¹、T. Sakamoto¹、M. Tada¹、N. Banno¹、M. Miyamura¹、K. Okamoto¹、N. Iguchi¹、T. Nohisa¹ (1.Low-power Electronics Association & Project , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories

G. Palma¹、E. Vianello¹、G. Molas¹、C. Cagli¹、F. Longnos²、J. Guy¹、M. Reyboz¹、C. Carabasse¹、M. Bernard¹、F. Dahmani²、D. Bretegnier²、J. Liebault²、B. De Salvo¹ (1.CEA, LETI, MINATEC Campus、2.Altis Semiconductor , France)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-3] Optimization of Conductive Filament of Oxide-based RRAM for Low Operation Current by Stochastic Simulation

P. Huang¹、Y. X. Deng¹、B. Gao¹、B. Chen¹、F. F. Zhang¹、D. Y¹、L. F. Liu¹、G. Du¹、J. F. Kang¹、X. Y. Liu¹ (1.Peking Univ. , P. R. China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong¹、W. Wu¹、Z. Liu¹、X. A. Tran²、H. Y. Yu³、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Nanyang Tech. Univ. , Singapore、3.South Univ. of Sci. and Tech. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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