[L-1-2] Real Time Failure Imaging of Power Semiconductors under Power Stress using Scanning Acoustic Tomography

A. Watanabe¹、I. Omura¹ (1.Kyushu Inst. of Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-1-3] Triggering Mechanism for Neutron Induced Single Event Burnout in Power Diode

T. Shoji¹、S. Nishida²、K. Hamada² (1.Toyota Central R&D Labs., Inc、2.Toyota Motor Corporation , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-1-4] Effects of Trap Energy Levels on Reverse Recovery Surge of Silicon Power Diode

S. Machida¹、Y. Yamashita¹、T. Misumi²、T. Sugimaya¹ (1.Toyota Central R&D Labs. Inc.、2.Toyota Motor Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-1-5] Compact Modeling of Floating-Base Effect in IGBT Based on Potential Modification by Accumulated Charge

T. Yamamoto¹、M. Miyake²、M. Miura Mattaush² (1.DENSO Corp.、2.Hiroshima Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-1-6] Super Junction Power MOSFET by Multi step Trench Process

J. M. Wang¹、K. Y. Tai¹、L. C. Wang¹、C. H. Huang²、C. Lin²、C. J. Lin¹、Y. C. King¹ (1.National Tsing-Hua Univ.、2.Taiwan Semiconductors Company Ltd. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-2-1] X-Ray Three-Dimensional Topography Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC

R. Tanuma¹、D. Mori²、I. Kamata¹、H. Tsuchida¹ (1.Central Res. Inst. Electric Power Indus. (CRIEPI)、2.Fuji Electric Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-2-2] Evolution of threading edge dislocation during solution growth of SiC

S. Harada¹、Y. Yamamoto¹、K. Seki¹、A. Horio¹、T. Mitsuhashi¹、T. Ujihara¹ (1.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-2-3] Point Defect Reduction and Carrier Lifetime Improvement of Si- and C-face 4H-SiC Epilayers

T. Miyazawa¹、H. Tsuchida¹ (1.Central Res. Inst. of Electric Power Industry , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-2-4] Suppression of Al Memory Effect on Growing 4H-SiC Epilayers by Hot-wall Chemical Vapor Deposition

S.Y. Ji¹、K. Kojima¹、Y. Ishida¹、S. Yoshida¹、H. Tsuchida²、H. Okumura¹ (1.National Inst. of Adv. Ind. Sci. and Tech.、2.Central Res. Inst. of Electric Power Indust. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-2-5] Phosphorus Doping of 4H-SiC by KrF Excimer Laser Irradiation in Phosphoric Solution

A. Ikeda¹、K. Nishi¹、H. Ikenoue¹、T. Asano¹ (1.Kyushu Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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