[D-6-4] Nickel Stanogermanide Ohmic Contact on N-type Germanium-Tin (Ge1-xSnx) using Se and S Implant and Segregation

Y. Tong¹、S. Su²、B. Liu¹、L. Wang¹、P. S. Y. Lim¹、Y. Yang¹、W. Wang¹、K. L. Low¹、G. Zhang²、C. Xue²、B. Cheng²、G. Han¹、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore、2.State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Academy of Sci. , P. R. China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-1] CMOS Contact Resistance Reduction through Aluminum Profile Engineering

S. M. Koh¹、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-2] W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. Nodes

A. Veloso¹、S. A. Chew¹、T. Schram¹、H. Dekkers¹、A. Van Ammel¹、T. Witters¹、H. Tielens¹、N. Heylen¹、K. Devriendt¹、F. Sebaai¹、S. Brus¹、L. A. Ragnarsson¹、L. Pantisano¹、G. Eneman¹、L. Carbonell¹、O. Richard¹、1P. Favia¹、1J. Geypen¹、1H. Bender¹、1Y. Higuchi²、2A. Phatak³、3A. Thean¹、1N. Horiguchi¹ (1.IMEC , Belgium、2.Panasonic , Japan、3.Applied Materials Belgium NV , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-3] Low-barrier Hetero Junction to N-type Silicon Using Novel Ultrathin Epitaxial Silicide Consisting of Tungsten-encapsulating Silicon Clusters

N. Okada^1,2、N. Uchida²、T. Kanayama^1,2 (1.Univ. of Tsukuba、2.AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-4] Quantitative Evaluation of Dopant Concentration in Shallow Silicon pn Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy

L. Bolotov^1,2、K. Fukuda²、H. Arimoto²、T. Tada²、T. Kanayama² (1.Univ. of Tsukuba、2.Nat. Inst. of Advanced Indus. Sci. and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-1] Measurements of Anisotropic Biaxial Stresses in x = 0.15 and 0.30 Si1-xGex Nanostructures by Oil-Immersion Raman Spectroscopy

D. Kosemura¹、M. Tomita¹、K. Usuda²、T. Tezuka²、A. Ogura¹ (1.Meiji Univ.、2.Green Nanoelectronics Collaborative Research Center, AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-2] Role of Ar on Structual Phase Transformation of Sputtered HfO2

T. Iwai¹、Y. Nakajima¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-3] Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-shaped SiGe Layer on Si Substrate by EBSP

M. Tomita^1,2、M. Nagasaka¹、D. Kosemura¹、K. Usuda³、T. Tezuka³、A. Ogura¹ (1.Meiji Univ.、2.Research Fellow of the Japan Society for the Promotion of Sci.、3.Green Nanoelectronics Collaborative Research Center, AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-4] Analysis of micro-Raman spectra combined with FDTD electromagnetic simulation and FEM stress simulation for local stress distribution in Si MOSFETs

T. Tada¹、A. Satoh¹、H. Arimoto¹、K. Fukuda¹、K. Fujita²、T. Kanayama¹ (1.AIST、2.ASTOM R&D , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-1] High-Performance Tri-Gate Silicon Nanowire Transistors for Ultra-Low Power LSI

M. Saitoh¹、C. Tanaka¹、K. Ota¹、K. Uchida¹、T. Numata¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード