[PL-2-2] One-step Further of Wide Band-gap Semiconductor SiC

H. Matsunami¹ (1.Kyoto Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-1] Interface Stabilizing and EOT Scaling of Al2O3 /Ge Gate Stack with Ozone Post-Oxidation without Additional Interface Layer Formation

J. Sun^1,2、Y. Geng²、H. Lu²、W. Wu¹、X. Ye¹、Z. Yang¹、Y. Zhao¹、Y. Shi¹ (1.Univ. of Nanjing、2.Univ. of Fudan , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-2] Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical

K. Kato^1,2、S. Shibayama¹、M. Sakashita¹、W. Takeuchi¹、N. Taoka¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ.、2.Research Fellow of JSPS , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-3] Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers

S. Kojima¹、K. Sakamoto¹、Y. Iwamura¹、K. Hirayama¹、K. Yamamoto¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-4] Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy

S. K. Wang¹、B. Xue¹、H. Liang²、Z. Mei²、Y. Li¹、W. Zhao¹、B. Sun¹、X. Du²、H. G. Liu¹ (1.Inst. of Microelectronics, Chinese Academy of Sci.、2.Inst. of Physics, Chinese Academy of Sci. , CHINA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-5] High Quality Germanium Dioxide Formation Using Damage-Free and Low-Temperature Neutral Beam Oxidation Process

A. Wada¹、R. Zhang²、S. Takagi²、S. Samukawa¹ (1.Tohoku Univ.、2.The Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-6] Impacts of interfacial insulator on poly-crystalline germanium growth in low temperature processing

S. Kabuyanagi^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-7] Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth

R. Matsumura¹、Y. Tojo¹、H. Yokoyama¹、M. Kurosawa¹、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-8] Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET

T. Ueno¹、H. Miyoshi¹、Y. Hirota¹、J. Yamanaka²、K. Arimoto²、K. Nakagawa²、Y. Yusuke³、Y. Shiraki³、T. Kaitsuka¹ (1.Tokyo Electron Ltd.、2.Univ. of Yamanashi、3.Tokyo City Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-9] Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection

D. H. Zadeh¹、Y. Suzuki¹、H. Omine¹、K. Kakushima¹、P. Ahmet¹、Y. Kataoka¹、A. Nishiyama¹、N. Sugii¹、K. Tsutsui¹、K. Natori¹、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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