[PS-1-10] Electrical Characteristics of Anatase-TiO2 Films by Low Temperature Fabrication

M. Kimura¹、T. Nabatame²、H. Yamada¹、A. Ohi²、T. Chikyow²、T. Ohishi¹ (1.Shibaura Inst. of Tech.、2.National Inst. for Materials Sci. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-11] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species

T. Suwa¹、A. Teramoto¹、T. Muro²、Y. Kinoshita²、S. Sugawa¹、T. Hattori¹、T. Ohmi¹ (1.Tohoku Univ.、2.Japan Synchrotron Radiation Res. Inst. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-12] Double-Gated Junctionless Vertical Channel Poly-Si Thin-Film Transistors

Y. H. Chen¹、J. W. Lin¹、L. C. Yen¹、R. H. Kuo¹、Y. H. Lu¹、Y. H. Wu¹、P. Y. Kuo¹、T. S. Chao¹ (1.National Chiao Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-13] Multi-Step Deposition and Low-Temperature Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealing as a Promising Means for Gate-Last High-k/Metal Gate Application

K. S. Yew¹、C. H. Tang¹、D. S. Ang¹ (1.Nanyang Technological Univ. , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-14] Rate Determining Process and Loading Effects in Si Etching with HCl Gas

N. Morioka¹、J. Suda¹、T. Kimoto¹ (1.Kyoto Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-15] Ultra-High Resolution Depth Profiling of Carrier Concentration in P-implanted Silicon by HREELS

S.J. Park¹、N. Uchida¹、H. Arimoto^1,2、T. Tada¹、T. Kanayama¹ (1.National Inst. of Advanced Indus. Sci. and Tech.、2.Fujitsu Semiconductor Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-16] Characterization of As Implanted and Annealed Ge by Photoemission and Electrical Measurements

T. Ono¹、A. Ohta¹、H. Murakami¹、S. Higashi¹、S. Miyazaki² (1.Hiroshima Univ.、2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-17L] Low-Temperature Formation of High-Quality Oxide for MOSFETs on Flexible Substrates

H. Hasegawa¹、Y. Iijima¹、K. Adachi¹、S. Nozaki¹、K. Uchida¹ (1.Univ. of Electro-Communications , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-1] Investigation of Electrical Performances for n-MOSFET Devices Integrating with Bonding and Thinning Technologies in 3D Integration

C. A. Cheng¹、C. H. Lu²、C. H. Ho³、K. N. Chen⁴ (1.National Chiao Tung Univ.、2.National Chiao Tung Univ.、3.National Nano Device Lab.、4.National Chiao Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-2] Improvement of Crystallographic Quality of Electroplated Copper Thin-Film Interconnections for 3D TSVs

N. Murata¹、K. Suzuki¹、R. Furuya¹、O. Asai¹、H. Miura¹ (1.Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

665件中(421 - 430)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
次へ »

▲