[PS-3-21] The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs

M. H. Liao¹、C. H. Chen¹、L. C. Chang¹、C. Yang¹、S. C. Kao¹、C. F. Hsieh² (1.National Taiwan Univ.、2.Industrial Tech. Research Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-22] A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring NBTI Degradation

J. Hong¹、Y. D. He¹、G. G. Zhang¹、X. Zhang¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-23] Superior Recovery Characteristics of SiGe pMOSFETs under NBTI Stress

D. Y. Choi¹、C. W. Sohn¹、H. C. Sagong¹、E .Y. Jeong¹、J. W. Jang¹、C. K. Baek¹、C. Y. Kang²、J. S. Lee¹、Y. H. Jeong¹ (1.Pohang Univ. of Sci. and Tech. (POSTECH) , Republic of Korea、2.SEMATECH , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-24] Effect of Anneal Process on Trap Properties in Metal/High-k Gate MOSFETs through RTN Characterization

H. F. Chiu¹、S. L. Wu²、Y. S. Chang¹、S. J. Chang³、S. C. Tsai³、P. C. Huang³、O. Cheng⁴ (1.National Tsing Hua Uni.、2.Cheng Shiu Uni.、3.National Cheng Kung Uni.、4.United Microelectronics Corp. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-25] Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹、S. L. Wu²、C. Y. Wu³、C. W. Huang⁴、T. Y. Lu⁵、P. C. Huang⁶、S. J. Chang⁷ (1.Univ. of NCKU、2.Univ. of CSU、3.Univ. of CSU、4.Univ. of CSU、5.Univ. of CSU、6.Univ. of NCKU、7.Univ. of NCKU , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-26] 1/f Noise Characteristic in Independent-Double-Gate-FinFET

H. Sakai¹、S. Ouchi²、K. Endo²、T. Matsukawa²、Y. X. Liu²、Y. Ishikawa²、T. Tsukada²、T. Nakagawa²、T. Sekigawa²、H. Koike²、M. Masahara²、H. Ishikuro¹ (1.Keio Univ.、2.National Inst. of Advanced Indus. Sci. and Tech. (AIST) , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-27] Narrow Width Effects on High Frequency Performance and RF Noise of Sub-40nm Multi-finger nMOSFETs

K. L. Yeh¹、C. S. Chang¹、J. C. Guo¹ (1.National Chiao-Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-28] Impact of ZrO2 on Electron Trapping Behavior in 28 nm HKMG nMOSFETs by Low-Frequency (1/f) Noise and RTN Analysis

S. C. Tsai¹、S. L. Wu²、C. Y. Wu³、C. W. Huang⁴、Y. Y. Lu⁵、B. C. Wang⁶、S. J. Chang⁷、J. F. Chen⁸、P. C. Huang⁹ (1.Univ. of NCKU、2.Univ. of CSU、3.Univ. of CSU、4.Univ. of CSU、5.Univ. of CSU、6.Univ. of NCKU、7.Univ. of NCKU、8.Univ. of NCKU、9.Univ. of NCKU , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-29] Lifetime evaluation on AC stress in High-K / Metal-Gate with Using Dual-Pulsed-Test-System (DPTS)

H. Mori¹、Y. Ikeda¹、T. Kato¹、T. Uemura¹、H. Matsuyama¹ (1.FUJITSU SEMICONDUCTOR LTD. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-30] Study of Off-State Breakdown and Hot-Carrier improvement by Suppression of Kirk Effect in LDMOS with Gradual Junction Structure

C. R. Yan¹、J. F. Chen¹、C. Y. Lin²、H. T. Hsiu²、Y. C. Liao²、M. T. Yang²、Y. C. Lin²、H. H. Chen² (1.Univ. of Cheng Kung、2.Corp. of Powerchip , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード