A. Tanaka¹、K. Nakayama¹、K. Asano¹、T. Miyazawa²、H. Tsuchida² (1.Kansai Electric Power Co., Inc.、2.Central Res. Inst. of Electric Power Industry , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-6] Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes

K. Konishi¹、S. Nakata¹、Y. Nakaki¹、Y. Nakao¹、A. Nagae¹、T. Tanaka¹、Y. Toyoda¹、H. Sumitani²、T. Oomori² (1.Advanced Tech. R&D Center, Mitsubishi Electric Corporation,、2.Power Device Works, Mitsubishi Electric Corporation, , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-7] High temperature operation of diamond Schottky diodes above 750 degrees

K. Ueda¹、K. Kawamoto¹、T. Soumiya¹、E. Bustarret²、H. Asano¹ (1.Nagoya Univ. , Japan、2.Inst. Neel, CNRS , France)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-8] A 0.25um High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction

C. Y. Hung¹、K. H. Lo¹、C. M. Hu²、C. H. Chu²、D. C. Chang³、J. Gong⁴、C. F. Huang¹ (1.National Tsing Hua Univ.、2.TPK Touch solutions Inc.、3.National Chip Implementation Center、4.Tung Hai Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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