[PS-6-7] GaN-based Metal-Semiconductor-Metal Photodetectors Fabricated on Patterned Sapphire Substrates

K. T. Liu¹、S. J. Chang²、S. Wu³、Y. S. Chang⁴ (1.Univ. of Cheng Shiu、2.Univ. of National Cheng Kung、3.Univ. of Tung-Fang Design、4.Univ. of National Formosa , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-8] Temperature Effect on Electrical Properties of HfInZnO Amorphous Oxide Thin Film Transistor

J. S. Chang¹、J. H. Kim¹、D. W. Kwon¹、B. G. Park¹ (1.Natl. Univ. of Seoul , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-9] High performance dual-layer channel ZnO thin film transistor

Y. F. Geng^1,2、D. D. Han¹、J. Cai¹、W. Wang¹、L.L. Wang¹、Y. Tian¹、H. K. Yao¹、L. X. Qian³、Y. Wang¹、S. D. Zhang² (1.Peking Univ.、2.Shenzhen Graduate School of Peking Univ.、3.Beijing Inst. of Tech. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-10] Investigation of trapping properties in AlGaN/GaN HEMT heterostructures grown on silicon with thick buffer layers

J. Freedsman¹、T. Kubo¹、T. Egawa¹ (1.Nagoya Inst. of Tech., Research center for nano device and system , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-11] Effects of Annealing Method on the Electrical Characteristics of Solution-Processed InGaZnO Metal-Point-Contact Transistor

S. W. Lee¹、Y. H. Hwang¹、W. J. Cho¹ (1.Univ. of Kwangwoon , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-12] Fabrication of AlGaN/GaN HEMTs with Slant Field Plates by Using Deep-UV Lithography

H. C. Wang¹、Y. C. Lin¹、C. C. Chang¹、H. T. Hsu¹、T. E. Shie¹、L. C. Huang¹、C. C. Chung¹、E. Y. Chang¹ (1.National Chiao-Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-13] Enhancement of RF Characteristics of AlGaN/GaN HEMTs with Shield Source Field Plate using BCB

M. Lee¹、Y. M. Ryoo¹、N. Lee¹、H. Y. Cha²、K. Seo¹ (1.Univ. of Seoul National、2.Univ. of Hongik , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-14] Normally-off recessed AlGaN/GaN MOSHFETs using ICPCVD SiO2

B. R. Park¹、J. G. Lee¹、I. H. Min²、K. S. Seo²、H. Y. Cha¹ (1.Hongik Univ.、2.Seoul National Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-15] Power Schottky Barrier Diodes with Improved Schottky Contacts on AlGaN/GaN Heterostructures

N. Jeon¹、W. Choi¹、I. Min¹、H. Cha²、K. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-16] AlGaN MSM Photo Sensors with AlN/SiN Nucleation Layers

C. H. Chen¹、M. H. Yang¹、W. C. Lin¹、C. M. Tsai¹ (1.Cheng Shiu Univ. , Taiwan (R.O.C.))

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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