[PS-5-13] ESD Protection Design for V-band Low-Noise Amplifier Using RF Junction Varactors

M. H. Tsai¹、S. K. Huang¹、S. Hsu¹ (1.National Tsing Hua Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-5-14] A Simple and Useful Layout Scheme to Improve the CDM Robustness for the Input Buffer

T. C. Kao¹、J. H. Lee²、C. H. Lien³、C. W. Chiu⁴、H. D. Su⁵ (1.Univ. of Tsing Hua、2.Corp. of Richtek Tech.、3.Univ. of Tsing Hua、4.Corp. of Richtek Tech.、5.Corp. of Richtek Tech. , Taiwan. R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-5-15] Impact on delay due to random telegraph noise under low voltage operation in logic circuits

S. Nishimura¹、T. Matsumoto¹、K. Kobayashi^2,3、H. Onodera^1,3 (1.Kyoto Univ.、2.Kyoto Inst. Tech.、3.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-5-16L] Wide Dynamic Range Active Pixel Sensor Using a High-Sensitivity Gate/Body-Tied Photodetector with an Overlapping Control Gate

S. H. Jo¹、M. Bae¹、M. Lee¹、J. Y. Kim¹、P. Choi¹、J. K. Shin¹ (1.Univ. of Kyungpook National , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-1] Polycrystalline ZnO Mott-barrier diodes

Z. J. Liu¹、H. W. Huang¹、J. Y. Gan¹、T. R. Yew¹ (1.National Tsing-Hua Univ. , Taiwan, R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-2] Effects of in situ Surface Passivation of AlGaN/GaN MOS-HEMT: A Simulation Study

P. Somasuntharam¹、X. Liu¹、Y. C. Yeo¹、L. S. Tan¹ (1.National Univ. of Singapore , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-3] Comparison of Noise and Power Characteristics of Single- and Dual-Gate AlGaAs/InGaAs pHEMTs

C. C. Hu^1,2、S. H. Lin²、D. M. Lin³、C. C. Huang⁴、Y. M. Hsin²、C. K. Lin⁵、Y. C. Wang⁵、Y. J. Chan⁶ (1.Chung-Shan Inst. of Sci. and Tech.、2.National Central Univ.、3.Taiwan Semiconductor Manufac. Corp.、4.Yuan Ze Univ.、5.Win Semiconductors Corp.、6.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-4] Microwave performance of InGaAs MOSFET with InP interfacial layer

H. D. Chang¹、B. Sun¹、L. Lu¹、G. M. Liu¹、W. Zhao¹、W. X. Wang²、H. G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences、2.Inst. of Physics of Chinese Academy of Sciences , china)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-5] Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process

Y. Kumazaki¹、T. Kudo¹、Z. Yatabe¹、T. Sato¹ (1.Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-6] AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact

O. Seok¹、W. Ahn¹、Y. Kim¹、M. Ha²、M. Han¹ (1.Seoul Nat'l Univ.、2.Korea Electron. Tech. Inst. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード