[PS-6-5] Suppress Current Collapse Effect by Optimizing 0.12um Gate Structure of AlGaN/GaN HEMTs on Si-substrate for Microwave Power Applications

D. Kim¹, S. Eom¹, S. Han¹, H. Cha², K. Seo¹ (1.Seoul National Univ., 2.Hongik Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-6] Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ Si_xN_y on AlGaN

H.Y. Ko¹, J. Park¹, H. Lee¹, Y. Jo¹, M. Song¹, T. Jang¹ (1.LG Electronics (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-7] Improvement of Hysteresis Behavior in AlGaN/GaN MIS-HEMTs with SiN_x Using NH₃

H. Ryu¹, W. Choi¹, N. Jeon¹, H.Y. Cha², K.S. Seo¹ (1.Seoul National Univ., 2.Hongik Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-8] Effect of SF₆ Plasma Treatment on Gate Leakage and Subthreshold Characteristics of AlGaN/GaN HEMTs

N. Lee¹, N. Jeon¹, D. Kim¹, M. Kim¹, S. Choi¹, K.S. Seo¹ (1.Seoul National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-9] On-wafer Nonlinear Behavior Modeling Technology for High Power GaN HEMTs Using Load-dependent X-parameters

C.S. Chiu¹, C.W. Chuang¹, B.Y. Chen¹, W.D. Liu¹, G.W. Huang^1,2, Y.C. Lin², Y.S. Chiu², E.Y. Chang² (1.National Nano Device Labs., 2.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-10] Investigations on the Dynamic On-Resistance of High Voltage AlGaN/GaN HFETs

J.H. Shin¹, S.Y. Jang¹, T. Jang¹ (1.LG Electronics (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-11] Wet cleaning process for GaN Surface at room temperature

Y. Tsuji^1,2, T. Katsuyama¹, A. Teramoto², Y. Shirai², S. Sugawa², T. Ohmi² (1.Sumitomo Electric Industries, Ltd., 2.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-12] Analyses of Chemical States at SiN_x/GaN Interface by HAXPES

Y. Saito¹, T. Yonemura¹, J. Iihara¹, S. Uemura¹, Y. Tateno¹, T. Kouchi¹, T. Araya², S. Kurachi², T. Komatani², J. Wada² (1.Sumitomo Electric Industries, Ltd., 2.Sumitomo Electric Device Innovations, Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-13] Investigation of Temperature Dependence of DIBL for InGaAs Multi-Gate n-MOSFETs Considering Quantum Confinement

S.H. Wu¹, Y.S. Wu¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-14] Performance scalability studies by TCAD simulation of raised source/drain versus implanted source/drain plasma-PH₃ passivated In_0.53Ga_0.47As MOSFET

A.B.S. Sumarlina^1,2, G. Samudra¹ (1.National Univ. of Singapore, 2.GLOBALFOUNDRIES (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF Download

617 results (431 - 440)

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