[D-2-1] Simulation Study on Quasi-Ballistic Heat Transfer Effect in FinFETs

Y. Kamakura^1,2, K. Kukita¹, I.N. Adisusilo¹, S. Koba³, H. Tsuchiya^2,3 (1.Osaka Univ., 2.JST-CREST, 3.Kobe Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] Bulk FinFET Fin Height Control using Gas Cluster Ion Beam (GCIB)-Location Specific Processing (LSP)

M.S. Kim¹, R. Ritzenthaler¹, J. Everaert¹, L. Fernandez², K. Devriendt¹, J.W. Lee¹, A. Redolfi¹, S. Mertens¹, E. Burke², N. Horiguchi¹, A. Thean¹ (1.IMEC, 2.Tokyo Electron (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] New Observations on the Corner Effect and STI-Induced Effect in Trigate CMOS Devices

E.R. Hsieh¹, H.M. Tsai¹, S.S. Chung¹, C.H. Tsai², R.M. Huang², C.T. Tsai² (1.National Chiao Tung Univ., 2.UMC (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Leakage-Delay Analysis of In_xGa_1-xAs-OI FinFETs for Logic Applications

V.P.H. Hu¹, H.H. Shen¹, M.L. Fan¹, P. Su¹, C.T. Chuang¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] Comparison of Analog FOM for TFET and FinFET Considering Work Function Variation

K.C. Lee¹, M.L. Fan¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-3-1] Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density

D.H. Zadeh¹, H. Oomine¹, K. Kakushima², Y. Kataoka², A. Nishiyama², N. Sugii², H. Wakabayashi², K. Tsutsui¹, K. Natori¹, H. Iwai¹ (1.Frontier Research Center, Tokyo Inst. of Tech., 2.Interdisciplinary Graduate School of Science and Engineering, Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-3-2] Channel Length Scaling Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling

S. Koba¹, M. Ohmori¹, Y. Maegawa¹, H. Tsuchiya^1,2, Y. Kamakura^2,3, N. Mori^2,3, M. Ogawa¹ (1.Kobe Univ., 2.JST-CREST, 3.Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] Multi-electron Wave Packet Transport Dynamics in Nanoscale Channel

T. Shiokawa¹, G. Fujita¹, Y. Takada², S. Konabe^1,5, M. Muraguchi^3,5, T. Yamamoto², T. Endoh^3,5, Y. Hatsugai^1,3, K. Shiraishi^1,4 (1.Univ. of Tsukuba, 2.Tokyo Univ. of Sci., 3.Tohoku Univ., 4.Nagoya Univ., 5.CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-3-4] Effect of Alloy Scattering on Hole Mobility of sSi/sSiGe/sSOI Quantum Well pMOSFETs

W. Wu¹, W. Yu², Q. Zhao³, J. Sun¹, D. Zhai¹, Y. Shi¹, Y. Zhao^1,4 (1.Nanjing Univ., 2.State Key Lab. of Functional Materials and Informatics, 3.Peter Grünberg Inst. 9, 4.State Key Lab. of Silicon Materials (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-4-1] Extraction of Time Constants Ratio over Nine Orders of Magnitude for Understanding Random Telegraph Noise in MOSFETs

T. Obara¹, A. Yonezawa¹, A. Teramoto¹, R. Kuroda¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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