[PS-6-15] Ultrahigh Sensitive Non-Resonant and Resonant Terahertz Detection by Asymmetric Dual-Grating Gate HEMTs

Y. Kurita¹, G. Ducournau², D. Coquillat³, K. Kobayashi¹, A. Satou¹, Y.M. Meziani⁴, V.V. Popov⁵, W. Knap³, T. Suemitsu¹, T. Otsuji¹ (1.RIEC, Tohoku Univ., 2.IEMN, 3.CNRS, Univ. Montpellier 2, 4.Univ. Salamanca, 5.Kotelnikov Inst. of Radio Eng. and Electronics (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-16] Microwave Performance of In_0.25Ga_0.75As MOSFET with an InGaP interfacial layer

H.D. Chang¹, G.M Liu¹, B. Sun¹, H.G Liu¹, X.L Zhou², J.Q Pan² (1.Institute of Microelectronics Chinese Academy of Sciences, 2.Institute of Semiconductor Chinese Academy of Sciences (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-17] Comparison between theoretical and experimental results for energy states of two-dimensional electron gas in pseudomorphically strained InAs-HEMTs

Y. Nishio¹, T. Tange¹, N. Hirayama¹, T. Iida¹, Y. Takanashi¹ (1.Tokyo Univ. of Science (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-18] On the electrical characteristics of the atomic layer deposition Al₂O₃/In_0.53Ga_0.47As MOSCAPs with various annealing processes

Q.H Luc¹, E.Y Chang¹, H.D Trinh¹, H.Q Nguyen¹, B.T Tran¹, Y.C Lin¹, H.B Do¹ (1.Univ. of Chiao Tung (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-19] Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application

Y.J. Yoon¹, S. Cho², J.H. Seo¹, E.S. Cho³, S.W. Kang¹, J.H. Bae¹, J.H. Lee¹, B.G Park⁴, J.S. Harris², I.M. Kang¹ (1.Kyungpook National Univ., 2.Stanford Univ., 3.Gachon Univ., 4.Seoul National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-20] High Performance Solution-deposited InGaZnO Thin Film Transistors using Microwave Annealing and Ar/O₂ Plasma Treatment at Low Process Temperature

J.G. Gu¹, K.S. Kim¹, H.M. An², W.J. Cho¹ (1.Kwangwoon Univ. of Korea, 2.Osan College. of Korea (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-21] High-performance Single/Dual-layer Channel IGZO TFT Fabricated on Glass Substrates at Low-temperature

Y. Tian¹, D.D. Han¹, S.M. Zhang^1,2, F.Q. Huang^1,2, D.F. Shan^1,2, Y.Y. Cong¹, J. Cai^1,2, L.L. Wang^1,2, S.D. Zhang^1,2, X. Zhang¹, Y. Wang¹ (1.Peking Univ., 2.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-22] High performance and electrical characterization of write-once-read-many-times memory devices base on IGZO thin film with O₂ plasma treatment

P. Liu¹, T.P. Chen¹, Y.H. Zhao¹, Z. Liu², X.D. Li¹, J.I. Wong¹ (1.Nanyang Technological Univ., 2.Guangdong University of Tech. (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-23] Improved Stability of ZnO Thin Film Transistor with Dual Gate Structure under Negative Bias Stress

H.J. Yun¹, Y.S. Kim², Y.M. Kim¹, S.D. Yang¹, H.D. Lee¹, G.W. Lee¹ (1.National Univ. of Chungnam, 2.National Nanofab Center (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-24] Effects of Composition on Electrical Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors Deposited Using Atmospheric Pressure Plasma Jet

C.H. Wu¹, K.M. Chang^2,3, H.Y. Hsu², C.Y. Chen², S.J. Wang⁴, I.J. Hsieh¹, M.C. Hsu¹, C.S. Chang¹ (1.Chung Hua Univ., 2.Chiao Tung Univ., 3.I-shou Univ., 4.Cheng Kung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

617 results (441 - 450)

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