[A-3-1] Carrier Injection Induced Switching of Supper-lattice GeTe/Sb2Te3 Phase Change Memories

S. Kato¹, M. Araidai¹, K. Kamiya¹, T. Yamamoto¹, K. Shiraishi¹, T. Ohyanagi², N. Takaura² (1.Univ. of Tsukuba, 2.Low-power Electronics Association & Project (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Chemical Vapor Deposition GeTe/Sb2Te3 Super-Lattice Phase Change Memory

M. Kitamura¹, T. Morikawa¹, T. Ohyanagi¹, M. Tai¹, M. Kinoshita¹, K. Akita¹, N. Takaura¹ (1.Low-power Electronics Association and Project (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Investigation of Multi-Level-Cell Operation with 2-Step SET Pulse and SET Operation on Super-Lattice Phase Change Memories

T. Egami¹, K. Johguchi¹, S. Yamazaki¹, K. Takeuchi¹ (1.Chuo Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] A New Insight on I_RESET Reduction of Carbon-doped GST based PCM

Q. Hubert^1,2, C. Jahan¹, V. Sousa¹, L. Perniola¹, A. Kusiak³, J.L. Battaglia³, P. Noé¹, M. Bernard¹, C. Sabbione¹, M. Tessaire¹, F. Pierre¹, P. Zuliani⁴, R. Annunziata⁴, G. Pananakakis², B. De Salvo¹ (1.CEA - LETI, Minatec Campus, 2.IMEP - LAHC, 3.Lab. I2M, Univ. de Bordeaux, 4.STMicroelectronics (France))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] A Novel High-Density Embedded AND-type Spilt Gate Flash Memory

W.C. Shen¹, H.W. Pan¹, Z.S. Yang¹, Y.D. Chih², T.L. Lee¹, C.W. Lien¹, Y.C. King¹, C.J. Lin¹ (1.National Tsing Hua Univ., 2.Taiwan Semiconductor Manufacturing Company (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] A Logic CMOS Process Compatible Two-Bit MTP SONOS Nonvolatile Memory

C.T. Tsai¹, H.T. Wang¹, C.H. Chou¹, Y.H. Ho¹, S.S. Chung¹, W. Chang², S.D. Wang², C.H. Chen² (1.National Chiao Tung University, 2.UMC (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Y.X. Liu¹, T. Matsukawa¹, K. Endo¹, S. O'uchi¹, J. Tsukada¹, H. Yamauchi¹, Y. Ishikawa¹, W. Mizubayashi¹, Y. Morita¹, S. Migita¹, H. Ota¹, M. Masahara¹ (1.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Investigation of Random Grain-Boundary Induced Variability for Stackable NAND Flash Using 3D Voronoi Grain Patterns

C.W. Yang¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Optimum Crystal Orientation in Rhombohedral PZT Films for FeRAM Application

H. Funakubo¹, Y. Ehara¹, T. Oikawa¹, T. Yamada^2,3, S. Utsugi¹ (1.Tokyo Inst. Tech., 2.Nagoya Univ., 3.JST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Organic ferroelectric gate FET memory using high-mobility rubrene thin film

T. Kanashima¹, Y. Katsura¹, M. Okuyama² (1.Osaka Univ., 2.Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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