[PS-14-10] Suppressing Al Memory-Effect on CVD growth of 4H-SiC Epilayers by adding Hydrogen Chloride Gas

S. Ji¹, K. Kojima¹, Y. Ishida¹, S. Saito¹, S. Yoshida¹, H. Tsuchida², H. Okumura¹ (1.AIST, 2.Central Res. Inst. of Electric Power Industry (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-11] As and Al Activation in SiC Wafer by Atmospheric Thermal Plasma Jet Annealing

H. Hanafusa¹, R. Ashihara¹, K. Maruyama¹, S. Koyanagi¹, S. Hayashi¹, H. Murakami¹, S. Higashi¹ (1.Hiroshima Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-12] The XPS Study on Depth Profile of N Atom in Oxynitride Film Formed on 4H-SiC by Radical Nitridation

H. Okada¹, A. Takashima², T. Muro², H. Nohira¹ (1.Tokyo City Univ., 2.Japan Synchrotron Radiation Res. Inst. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-13] Evaluating the cryogenic performance of SiC PiN diodes.

P.M. Gammon¹, C.A. Fisher¹, V.A. Shah¹, M.R. Jennings¹, A. Pérez-Tomás², S.E. Burrows¹, M. Myronov¹, D.R. Leadley¹, P.A. Mawby¹ (1.Univ. of Warwick, 2.IMB-CNM-CSIC (UK))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-14L] 4H-SiC Screw Dislocations and Their Electronic Structures

T. Yamasaki^1,5, H. Koyama^1,5, J. Nara^1,5, J. Koga², T. Uda^2,5, A. Kuroda³, K. Minami³, T. Ohno^1,4,5 (1.National Institute for Materials Science, 2.ASMS, Co. Ltd., 3.RIKEN AICS, 4.IIS, Univ. of Tokyo, 5.MARCEED (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-15L] Heavy Ribbon Wire Bonding for Advanced Power Module Packages

S.M. Park¹, S. Nagao¹, T. Sugahara¹, K. Suganuma¹ (1.Inst. Sci. Indus. Res., Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-16L] Cell Pitch Design Limitation for Electrical and Thermal Characteristics in Super Junction MOSFET

J.M. Geum¹, S.S. Kyoung¹, E.S. Jung², Y.T. Kim³, M.Y. Sung¹ (1.Korea Univ., 2.Maple Semiconductor Inc., 3.Semiconductor Materials & Devices Lab., Korea Inst. of Sci. & Tech.(KIST) (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-1] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating

T. Sameshima¹, T. Nakamura¹, S. Yoshidomi¹, M. Hasumi¹, T. Ishii¹, Y. Inouchi², M. Naito², T. Mizuno³ (1.Tokyo Univ. of Agr. And Tech., 2.Nissin Ion Equipment Co., Ltd., 3.Kanagawa Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-2] Influence of Post-Deposition Annealing on the Passivation Quality of Room Temperature Atomic Layer Deposited Aluminum Oxide

H. Lee^1,4, T. Nagata³, N. Ikeno¹, K. Arafune^2,4, H. Yoshida^2,4, S. Satoh^2,4, T. Chikyow³, A. Ogura^1,4 (1.Meiji Univ., 2.Univ. of Hyogo, 3.National Inst. of Materials Sci., 4.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-15-3] Worldwide Performance Estimation of Silicon-based Photovoltaic Modules Using Meteorological Data

A. Kamei¹, S. Yoshida¹, N. Kataoka¹, S. Ueno¹, T. Minemoto¹ (1.Ritsumeikan Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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