[H-6-2] A Low-Power Capacitor-Less LDO Regulator with Adjustable Charge Injection Technique for OOK Transmitter

I. Akita¹, S. Asai¹, M. Ishida^1,2 (1.Toyohashi Univ. of Tech., 2.Electronics-Inspired Interdisciplinary Res. Inst. (EIIRIS) (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[H-6-3] Envelope Tracking CMOS Power Amplifier with High-speed CMOS Envelope Amplifier for Mobile Handsets

E. Yoshida¹, Y. Sakai¹, K. Oishi¹, H. Yamazaki¹, T. Mori¹, S. Yamaura², K. Suto² (1.Fujitsu Lab. Ltd., 2.Fujitsu Semiconductor Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-1-1] Advanced GaN Power Devices for Automotive Applications

T. Kachi¹ (1.TOYOTA Central R&D Labs., Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-1-2] Growth of bulk GaN Crystal by Na Flux Method

Y. Mori¹, M. Imade¹, M. Maruyama¹, M. Yoshimura¹ (1.Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-1-3] Effect of Gate Insulator Material on Dynamic On-Resistance in GaN MIS-HEMT on 6-inch Si

S. Akiyama¹, Y. Watanabe¹, T. Wakabayashi¹, K. Nukui¹, Y. Kotani¹, T. Ogino¹, T. Hosoda¹, M. Kanamura², K. Joshin², T. Kikkawa² (1.Fujitsu Semiconductor Ltd., 2.Fujitsu Labs. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-1-4] Au-Free Low Temperature Ohmic Contacts for AlGaN/GaN Power Devices on 200 mm Si Substrates

A. Firrincieli¹, B. De Jaeger¹, S. You¹, D. Wellekens¹, M. Van Hove¹, S. Decoutere¹ (1.imec (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-1-5] A Novel GaN-on-Si Substrate Power Transistor using Air-Bridge Matrix Structure

C.W. Yang¹, H.C. Wang¹, H.C. Chiu¹ (1.Univ. of Chang Gung (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-2-1] Nanostructured GaN Transistors: Pushing the Limits of Linearity and Reliability

E. Matioli¹, B. Lu¹, D.S. Lee¹, F. Gao¹, T. Palacios¹ (1.Massachusetts Inst. of Tech. (USA))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-2-2] Application of AlTiO thin films to AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors

T.Q. Nguyen¹, T. Ui¹, M. Kudo¹, H.A. Shih¹, T. Suzuki¹ (1.JAIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[J-2-3] Improved High-Temperture Characteristics of AlGaN/GaN MISHEMTs with ZrO₂/Al₂O₃ Dual Dielectric Films

M. Hatano¹, Y. Taniguchi¹, H. Tokuda¹, M. Kuzuhara¹ (1.Univ. of Fukui (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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