[D-6-5L] Sb-diffused Source/Drain Ultra-thin Body Ge-On Insulator nMOSFETs Fabricated by Ge Condensation

W.K. Kim¹, Y. Kin¹, Y.H. Kim¹, S.H. Kim¹, T. Osada², M. Hata², M. Takenka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Sumitomo Chemical Co. Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] The Demonstration of Complementary Tunnel FET with Vertical Tunneling Junction Structure Compatible with Si CMOS Platform

Y. Kondo¹, M. Goto¹, K. Miyano¹, A. Hokazono¹, T. Miyata¹, E. Sugizaki¹, K. Adachi¹, T. Ohguro¹, S. Kawanaka¹, Y. Toyoshima¹ (1.Semiconductor & Storage Products Company, Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] CMOS-Compatible Mesa-Etched Ultrathin Epitaxial Channel Tunnel Field-Effect Transistors

Y. Morita¹, T. Mori¹, S. Migita¹, W. Mizubayashi¹, A. Tanabe¹, K. Fukuda¹, T. Matsukawa¹, K. Endo¹, S. O'uchi¹, Y.X. Liu¹, M. Masahara¹, H. Ota¹ (1.GNC, AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] Dependence of The Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

M. Kashiwano¹, A. Yukimachi¹, Y. Miyamoto¹ (1.Tokyo Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] In_0.53Ga_0.47As Diodes for Band-to-Band Tunneling Calibration and n- and p-LineTFET performance prediction

Q. Smets^1,2, A.S. Verhulst¹, R. Rooyackers¹, C. Merckling¹, D. Lin¹, E. Simoen¹, A. Alian¹, M. Cantoro¹, A. Pourghaderi¹, K.H. Kao^1,2, D. Verreck^1,2, K. De Meyer^1,2, N. Collaert¹, V.Y. Thean¹, M.M. Heyns^1,2 (1.IMEC, 2.KULeuven (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] Designer Ge QDs on Si for Enhanced Near Infrared Photodetection

M.H. Kuo¹, C.C. Wang¹, W.T. Lai¹, T. George², P.W. Li¹ (1.National Central Univ., 2.Zyomed Corporation (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[E-2-2] Characterization of Electron Transport Through Ultra High Density Array of One-dimensionally Self-Aligned Si-based Quantum Dots

H. Niimi¹, K. Makihara¹, M. Ikeda², S. Miyazaki¹ (1.Nagoya Univ., 2.Hiroshima Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Size Dependence of Electrostatic Lens Effect in Vertical Pillar Type MOSFET

M. Muraguchi^1,2, T. Endoh^1,2 (1.Tohoku Univ., 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[E-2-4] Dynamical Coulomb Blockade in Multi-Electron Wave Packet Dynamics in Nanostructures

G. Fujita¹, T. Shiokawa¹, Y. Takada², S. Konabe^1,6, M. Muraguchi^4,6, T. Yamamoto², T. Endoh^3,4,6, Y. Hatsugai^1,4, K. Shiraishi^1,5 (1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 2.Faculty of Engineering, Tokyo Univ. of Science, 3.Center for Spintronics Integrated Systems,Univ. of Tohoku, 4.Graduate School of Engineering, Univ. of Tohoku, 5.Graduate School of Engineering, Univ. of Nagoya, 6.CREST ,Japan Science and Technology Agency (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[E-2-5] Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact

J. Kamioka¹, T. Kodera^1,2,3, T. Obata², K. Takeda², W.M. Akhtar², S. Tarucha^2,4, S. Oda¹ (1.Tokyo Tech., 2.Univ. of Tokyo, 3.PRESTO-JST, 4.RIKEN (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download