[PS-5-8] Co-Design of Application and NAND Flash Memory for Database Storage System

K. Miyaji^1,2, C. Sun^1,3, K. Takeuchi¹ (1.Chuo Univ., 2.Shinshu Univ., 3.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-9] Area-efficient Reconfigurable Ring Oscillator for Characterization of Static and Dynamic Variations

A.K.M.M. Islam¹, H. Onodera^1,2 (1.Kyoto Univ., 2.JST,CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-10] Novel Dynamic Reconfigurable FPGA based on Multi-Context Scheme Using One-Time Memory with Gate-Induced Permanent Path

M. Oda¹, K. Zaitsu¹, S. Yasuda¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-11] FPGA Implementation of 60-FPS QVGA-to-VGA Single-Image Super-Resolution

S. Chikuda¹, T. Ohira¹, Y. Sanada¹, M. Igarashi¹, M. Ikebe¹, T. Asai¹, M. Motomura¹ (1.Hokkaido Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-12] A VLSI Processor with Configurable Processing Element Array for Balanced Feature Extraction in High Resolution Images

H.B. Zhu¹, T. Shibata² (1.The Univ. of Tokyo, 2.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-5-13] An Analog VLSI Implementation of One-Class Support Vector Machine

R. Zhang¹, M. Kaneko¹, T. Shibata² (1.Japan Advanced Inst. of Sci. and Tech., 2.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-1] Fully Recessed Schottky Barrier Diodes with a Digital Etching on AlGaN/GaN Heterostructures

N. Jeon¹, W. Choi¹, H. Ryu¹, H.Y. Cha², K.S. Seo¹ (1.Seoul National Univ., 2.Hongik Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-2] Analysis of Forward Characteristics in AlGan/GaN SBD with Schottky Contact Lying on Mesa Edge

Y.R. Park¹, S.C Ko¹, W.Y. Jang¹, J.J. Kim¹, W.J. Jang¹, S.B. Bae¹, J.K. Mun¹, E.S. Nam¹ (1.Electronics and Telecommunication Research Inst. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-3] Effects of High-Temperature Annealing on Properties of Al₂O₃/InAlN Interface Formed by Atomic Layer Deposition

T. Nakano¹, M. Chiba¹, M. Akazawa¹ (1.Hokkaido Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-4] A Device Performance Study of Stacked Gate Dielectrics AlGaN/GaN MOS-HEMTs by Mixed Oxide Thin Film Growth Techniques

B.Y. Chou¹, Y.S. Wu¹, E.L. Huang¹, W.F. Chen¹, H.Y. Liu¹, W.C. Hsu¹, C.S. Lee², W.C. Ou¹, C.S. Ho¹ (1.Univ. of National Cheng Kung, 2.Univ. of Feng Chia (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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