[PS-1-2] Synthesis of Perovskite Structure SrHfO₃ Thin Films on Si Substrates Using RF Sputtering and Rapid Thermal Anneal

S. Migita¹, Y. Morita¹, M. Masahara¹, H. Ota¹ (1.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-3] A New Ar Desorption Peak in Thermal Desorption Spectroscopy Measurement of Sputtered HfO₂ Accompanied by its Structural Phase Transformation

T. Iwai¹, T. Yajima¹, T. Nishimura¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-4] Study of the interfacial SiO₂ scavenging in HfO₂/SiO₂/Si stacks through the ultra-high vacuum annealing

X. Li¹, T. Yajima¹, T. Nishimura¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-5] Observation of Scattering Effect on Carrier Mobility of MOSFET with La-incorporated-HfO₂ Gate Dielectric

S.W. You¹, M. Hasan¹, M.C. Nguyen¹, Y.S. Jeon¹, D.T. Tong¹, D.H. Lee¹, J.K. Jung¹, R. Choi¹ (1.Inha Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-6] Mechanism of Low-Temperature Activation of B in Si by Soft X-ray Irradiation

A. Heya¹, T. Fukuoka¹, N. Matsuo¹, K. Kanda², T. Noguchi³ (1.Univ.of Hyogo, 2.LASTI, Univ.of Hyogo, 3.Univ.of the Ryukyus (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-7] Detection of Effect of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution

S. Yamahori¹, K. Sawano¹, E. Ikenaga², Y. Shiraki¹, H. Nohira¹ (1.Univ. of Tokyo City, 2.Inst. of Japan Synchrotron Radiation Research (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-8] Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO₂/Ge Stacks on GeO₂ Thickness by X-ray Photoelectron Spectroscopy

X.L. Wang¹, S.K. Wang¹, J. Zhang², W.W. Wang¹, H.G. Liu¹, J. Yan¹, C. Zhao¹, D.P. Chen¹, T.C. Ye¹ (1.Inst. of Microelectronics, Chinese Academy of Sciences, 2.North China Univ. of Tech. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-9] Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO₂ Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy

W.F. Zhang^1,2, C.H. Lee^1,2, C.M. Lu¹, T. Nishimura^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-10] Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices

L. Han^1,2, S.K. Wang¹, B.Q. Xue¹, X. Zhang², W.R. Wu³, H.D. Chang¹, W. Zhao¹, B. Sun¹, Y. Zhao³, H.G. Liu¹, Y.P. Cui² (1.Inst. of Microelectronics, 2.Southeast Univ., 3.Nanjing Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-11] Effect of Oxygen Potential Lowering in N-doped GeO₂ on Suppression of GeO Desorption and Planarization of Ge Interface

T. Tabata^1,2, C.H. Lee^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

617 results (361 - 370)

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