ITO Resistive RAM (RRAM)

C.L. Lin¹, Y.H. Yang¹, C.M. Wu¹, P.C. Juan², C.H. Soh¹, Y.L. Huang¹, W.Y. Chang¹ (1.Feng Chia Univ., 2.Mingchi Univ. of Tech. (Taiwan))

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[A-8-3] High Performance Oxide Diode

I..P. Radu^1,2, B. Govoreanu¹, M.R. Ikram^1,2, A.P. Peter¹, K. Martens^1,2, H. Hody¹, W. Kim¹, M. Toeller³, V. Paraschiv¹, P. Favia¹, S. Clima¹, S. De Gendt^1,2, M. Heyns^1,2, A. Stesmans², M. Jurczak¹ (1.imec, 2.Univ. of Leuven, 3.Tokyo Electron Ltd. (Belgium))

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[A-8-4] Pulsed Operation of Resistance Switching Memory of Si/CaF₂/CdF₂ Resonant-tunneling Quantum-well Structures

J. Denda¹, K. Suda¹, Y. Kuwata¹, M. Watanabe¹ (1.Tokyo Inst. of Tech. (Japan))

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[B-1-2] Thermal and Plasma Treatments for Improved (Sub-)1nm EOT Planar and FinFET-based RMG High-k Last Devices and Enabling a Simplified Scalable CMOS Integration Scheme

A. Veloso¹, G. Boccardi¹, L.A. Ragnarsson¹, Y. Higuchi², H. Arimura^1,3, J.W. Lee^1,3, E. Simoen¹, M.J. Cho¹, Ph.J. Roussel¹, V. Paraschiv¹, X. Shi¹, T. Schram¹, S.A. Chew¹, S. Brus¹, A. Dangol¹, E. Vecchio¹, F. Sebaai¹, K. Kellens¹, N. Heylen¹, K. Devriendt¹, H. Dekkers¹, A. Van Ammel¹, T. Witters¹, T. Conard¹, I. Vaesen¹, O. Richard¹, H. Bender¹, R. Athimulam¹, A. Thean¹, N. Horiguchi¹ (1.Imec, 2.Panasonic, 3.K. U. Leuven (Belgium))

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[B-1-3] Si:C-S/D Engineering using Cascade C₇H_x Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

T. Yamaguchi¹, Y. Kawasaki¹, T. Yamashita¹, Y. Nishida¹, M. Mizuo², K. Maekawa¹, M. Fujisawa¹ (1.Renesas Electronics Corp., 2.Renesas Semiconductor Engineering Corp. (Japan))

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[B-1-4] Impact of Additional Pt on Channel Stress Induced by NiSi Film Formation

M. Mizuo¹, T. Yamaguchi², S. Kudo², Y. Hirose^1,2, H. Kimura², J. Tsuchimoto², N. Hattori² (1.Renesas Semiconductor Engineering Corp., 2.Renesas Electronics Corp. (Japan))

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[B-2-1] Low-temperature Microwave Annealing Process for Ge MOSFETs

Y.J. Lee^1,6, S.S. Chuang², C.I. Liu³, F.K. Hsueh¹, P.J. Sung¹, C.T Wu¹, C.H. Lai⁴, Y.M. Wan³, M.I. Current⁵, T.Y. Tseng² (1.National Nano Device Lab., 2.National Chiao Tung Univ., 3.I-Shou Univ., 4.Chung Hua Univ., 5.Current Scientific, 6.National Chung Hsing Univ. (Taiwan))

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[B-2-2] Low NiGe Contact Resistances by Carrier Activation Enhancement (CAE) Techniques for Ge CMOSFETs

H. Miyoshi¹, T. Ueno¹, Y. Hirota¹, J. Yamanaka², K. Arimoto², K. Nakagawa², T. Kaitsuka¹ (1.Tokyo Electron Ltd., 2.Univ. of Yamanashi (Japan))

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[B-2-3] Formation of Epitaxial Nickel Monogermanide on Ge(100) by Annealing of Ni/Sn Bilayer

M. Koike¹, Y. Kamimuta¹, Y. Moriyama¹, Y. Kamata¹, E. Kurosawa¹, T. Tezuka¹ (1.AIST (Japan))

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[B-2-4] Epitaxial Nickel Distanogermanide [Ni(Ge_1-xSn_x)₂] Contact Formation using Pulsed Laser Annealing

X. Xu¹, W. Wang¹, Y. Dong¹, E.Y.J. Kong¹, X. Gong¹, Q. Zhou¹, G. Han¹, P. Guo¹, L. Wang¹, Y.C. Yeo¹ (1.National Univ. of Singapore (Singapore))

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