[PS-2-10L] Advanced TSV fabrication processes for future packaging.

Y. Morikawa¹, T. Sakuihsi¹, T. Murayama¹, A. Suzuki¹, M. Hatanaka¹, K. Suu¹ (1.ULVAC, Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-11L] Low stress C doped WN diffusion barrier for Cu interconnection

Y.T. Kim¹, Y.H. Kim¹ (1.Korea Inst. of Sci. and Tech. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-2-12L] Analysis of Printed Ag Electrode on a-InGaZnO

Y. Ueoka¹, T. Nishibayashi², Y. Ishikawa¹, H. Yamazaki¹, Y. Osada¹, M. Horita¹, Y. Uraoka¹ (1.Nara Inst. of Sci. and Tech., 2.TOKYO ELECTRON LTD. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-1] Chemical Analysis of Multi-Step Deposited and Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealed Sub-1-nm EOT HfO₂/TiN Gate Stack for High-k Last Integration

K.S. Yew¹, D.S. Ang¹, L.J. Tang², J.S. Pan³ (1.Nanyang Tech. Univ., 2.Inst. of Microelectronics, A∗STAR, 3.Institute of Materials Research and Eng., A∗STAR (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-2] Effects of Rutile TiO₂ Interlayer on HfO₂/Ge MOS Structure

K. Kobashi^1,2, T. Nagata², T. Nabatame², Y. Yamashita², A. Ogura¹, T. Chikyow² (1.Meiji Univ., 2.NIMS (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-3] Effects of HfO₂ and Lanthanum Capping Layer Thickness on the Narrow Width Behavior of Gate First High-K and Metal Gate NMOS Transistors

S.S. Naresh¹, N.R. Mohapatra¹, P.K. Duhan² (1.IIT-Gandhinagar, 2.IIT-Bombay (India))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-4] Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

S.C. Tsai¹, S.L. Wu², J.F. Chen¹, K.S. Tsai², T.H. Kao¹, C.W. Yang³, C.G. Chen³, K.Y. Lo³, O.B. Cheng³, Y.K. Fang¹, S.J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-5] Study of Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements

T.H. Kao¹, S.L. Wu², K.S. Tsai², Y.K. Fang¹, B.C. Wang¹, C.M. Lai³, C.W. Hsu³, Y.W. Chen³, O.B. Cheng³, S.J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-6] Analysis and Application of Temperature Dependent Characteristics of the Random Telegraph Noise on Contact RRAM

L.S. Chang¹, Y.C King¹, C.J Lin¹ (1.National Tsing-Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-7] The Trade-off between STI Stress and Gate Resistance in RF MOSFETs Design for High Frequency Performance and RF Noise

C.Y. Ku¹, K.L. Yeh¹, J.C. Guo¹ (1.National Chiao-Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

617 results (381 - 390)

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