[B-13-4] Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
1997 International Conference on Solid State Devices and Materials |PDF Download
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1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download
1997 International Conference on Solid State Devices and Materials |PDF Download