[H-1-5] Floating Gate Memory based on Ferritin Nanodots with High-k Gate Dielectrics

K. Ohara¹、Y. Uraoka¹、T. Fuyuki¹、I. Yamashita¹、T. Yaegashi²、M. Moniwa²、M. Yoshimaru² (1.NAIST、2.STARC, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-6] Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots

M. Ikeda¹、R. Matsumoto¹、K. Shimanoe¹、K. Makihara¹、S. Miyazaki¹ (1.Hiroshima Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-1] Single Artificial Atom Lasing (Invited)

J. S. Tsai^1,2,3、O. Astafiev^1,2、K. Inomata²、A. O. Niskanen^3,4、T. Yamamoto^1,2,3、Y. A. Pashkin^1,2、Y. Nakamura^1,2,3 (1.NEC Corp.、2.RIKEN、3.CREST-JST, Japan、4.VTT Technical Res. Center of Finland, Finland)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-2] Perfect Invisibility using a Partially Left-handed Refracting Material

J. C. Nacher¹、U. Leonhardt²、T. Ochiai³ (1.Future Univ.-Hakodate, Japan、2.Univ. of St. Andrews, UK、3.Toyama Prefectural Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-3] Observation of a New Isoelectronic Trap Luminescence in Nitrogen δ-doped GaP

M. Ikezawa¹、Y. Sakuma²、M. Watanabe¹、Y. Masumoto¹ (1.Univ. of Tsukuba、2.NIMS, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-4] Graphene Nanoribbon Phototransistor: Proposal and Analysis

V. Ryzhii^1,4、M. Ryzhii^1,4、N. Ryabova^1,4、V. Mitin²、T. Otsuji^3,4 (1.Univ. of Aizu, Japan、2.Univ. at Buffalo, USA、3.Tohoku Univ.、4.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-5] Integration Recording System of Mechanoluminescence from Europium-doped SrAl₂O₄ by using Photo Sensitive Material

N. Terasaki¹、H. Kawahara¹、C. N. Xu^1,2 (1.AIST、2.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-6] Visualization of Weak Confinement Potentials by Near-field Optical Imaging Spectroscopy of Exciton and Biexciton in a Single Quantum Dot

Y. Sugimoto¹、T. Saiki¹、S. Nomura² (1.Keio Univ.、2.Tsukuba Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-2] Low-Energy Oxygen Ion Irradiation Effects on Carbon Nanotube Field-Effect Transistors with Passivation Films

S. Nagaso¹、Y. Ohno¹、K. Maehashi¹、K. Inoue¹、K. Yamamoto²、K. Matsumoto^1,2 (1.Osaka Univ.、2.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-3] High-density Horizontally-aligned Growth of Carbon Nanotubes for High-performance Field-effect Transistors

Y. Ohno¹、D. Phokharatkul¹、H. Nakano²、S. Kishimoto¹、T. Mizutani¹ (1.Nagoya Univ.、2.ULVAC, Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード