[H-3-4] Optical Identification and Electrical Characterization of Graphene Transferred from Natural Graphite on Thinner (90nm-thick) SiO₂

K. Nagashio¹、T. Nishimura¹、K. Kita¹、A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-5] Carbon based Superconducting Nanostructures for Molecular Spintronics Applications (Invited)

V. Bouchiat^1,2、J. P. Cleuziou^1,2、W. Wernsdorfer¹、T. Ondarcuhu³、M. Monthioux³、C. Girit²、O. Naaman²、Y. Zhang²、M. Crommie²、A. Zettl²、J. Clarke²、I. Siddiqi² (1.Institut Néel, France、2.Univ. of California, Berkeley, USA、3.CEMES-Toulouse, France)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-1] Device and Technology Platform with Silicon Nanowire (Invited)

G. Q. Lo¹、N. Singh¹、S. C. Rustagi¹、K. D. Buddharaju¹、N. Balasubramanian¹、D. L. Kwong¹ (1.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-2] Impact of Quantum Effect on Diffusion Layer Resistance of Si Nanowire MOSFETs

D. Hagishima¹、K. Matsuzawa¹、S. Odanaka² (1.Toshiba Corp.、2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-3] Impacts of Cross Section Shape and Dimension on Electron Effective Mass in Silicon Nanowires

D. Yao^1,2、G. Zhang²、G. Q. Lo²、B. Li¹ (1.National Univ. of Singapore、2.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-5-4] Uniaxially Strained SiGe/Si Core/Shell Nanowire pFETs Integrated on Bulk Si with Ni_xSi_yGe_1-x-y Source and Drain Contacts

Y. Jiang^1,2、N. Singh¹、T. Y. Liow¹、P. C. Lim³、S. Tripathy³、S. A. Oh³、G. Q. Lo¹、D. S. H. Chan²、D. L. Kwong¹ (1.Inst. of Microelectronics、2.National Univ. of Singapore、3.Inst. of Materials Res. and Eng., Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-6-1] Tunable Few Electron Double Dots in InAs Nanowires (Invited)

I. Shorubalko¹、A. Pfund¹、S. Gustavsson¹、T. Choi¹、R. Leturcq^1,2、K. Ensslin¹ (1.ETH Zürich, Switzerland、2.IEMN-CNRS UMR 8520, France)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-6-2] One-dimensional and Two-dimensional Spectral Diffusion in InP/InAs/InP Core-Multishell Nanowires

K. Goto¹、M. Ikezawa¹、S. Tomimoto¹、B. Pal¹、Y. Masumoto¹、P. Mohan²、J. Motohisa²、T. Fukui² (1.Univ. of Tsukuba、2.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-6-3] Effect of Growth Condition on Well-Arranged InGaN/GaN Nanocolumns Grown by Selective Area Growth (SAG) of rf-Plasma-Assisted Molecular-Beam Epitaxy

H. Sekiguchi^1,2、K. Kishino^1,2、A. Kikuchi^1,2 (1.Sophia Univ.、2.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-6-4] Spectroscopy and Imaging of GaAs/InGaAs/GaAs Nanowires Grown by Selective-area Metalorganic Vapor Phase Epitaxy

J. Motohisa¹、M. Fukui¹、Y. Kobayashi¹、T. Fukui¹ (1.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード