[AL-6-6] Fabrication of GaN MOSFET using Selectively Re-grown n⁺-GaN Layer on Etched Source and Drain Regions

D. S. Kim¹, H. S. Kang¹, C. H. Won¹, C. H. Bu¹, K. I. Jang¹, C. M. Yang¹, K. S. Im¹, K. W. Kim¹, S. D. Jung¹, R. H. Kim¹, M. K. Kwon¹, J. H. Lee¹ (1.Kyungpook National Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-7-1] InAlN/AIN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage

Q. Zhou¹, H. Chen¹, C. Zhou¹, Z. H. Feng², S. J. Cai², K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech., 2.Hebei Semiconductor Res. Inst. , China)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-7-2] Selective Electrochemical Formation of Recessed-Oxide-Gate Structures for AlGaN/GaN HEMTs

N. Azumaishi¹, N. Harada¹, T. Hashizume^1,2 (1.Hokkaido Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-7-3] AlGaN/GaN HFET grown on 6-inch diameter Si(111) substrates by MOCVD

S. M. Cho¹, E. J. Hwang¹, J. Park¹, K. C. Kim¹, T. Jang¹ (1.LG Electronics Inst. of Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-7-4] AlGaN/GaN HEMTs on Silicon with Hybrid Schottky-Ohmic Drain for Improved DC Characteristics

Y. S. Lin¹, Y. W. Lian¹, H. C. Lu¹, Y. C. Huang¹, S. S. H. Hsu¹ (1.National Tsing Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[AL-7-5] Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence

A. F. Wilson¹, A. Wakejima¹, S. L. Selvaraj¹, T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Solution-processed small molecular phosphorescent organic light emitting devices with a mixed single layer

Z. Wang¹, S. Naka¹, H. Okada¹ (1.Univ. of Toyama , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Hole Injection Enhancement in Organic Light-emitting Diodes by Introducing an Au Nanoparticles Layer

D. Wang¹, K. Fujita¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Improvement on Electroluminescence of Red Organic Light Emitting Diode by Doping with Sensitizers

S. H. Yang¹, C. H. Chuang¹, S. C. Huang¹, P. J. Shih¹ (1.National Kaohsiung Univ. of Applied Sciences , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] White Organic Light-Emitting Diodes Combining Blue Organic Light-Emitting Diodes with a Sr₂SiO₄:Eu³⁺ Color Conversion Layer

S. H. Su¹, W. Y. Wang¹, M. Yokoyama¹ (1.I-Shou Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download