[P-1-20L] Novel Gadolinium Oxide Nanocrystals with Hafnium Oxide Trapping Layer Nonvolatile Memory Using Al₂O₃/SiO₂ Dual Tunneling Layers

C. T. Lin¹, J. C. Wang¹, C. H. Chen¹, P. W. Huang¹, C. S. Lai¹ (1.Chang Gung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-1] Direct wafer bonding technology of 300mm wafer

S. Hongo¹, K. Tanida¹, N. Yamaguchi¹, K. Takahashi¹ (1.Toshiba Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-2] Thinning Process Induced Surface Defects in Ultra-Thin Si Wafer

M. Murugesan¹, H. Nohira², C. Miyazaki³, H. Shimamoto³, H. Kobayashi³, T. Fukushima¹, T. Tanaka¹, M. Koyanagi¹ (1.Tohoku Univ., 2.Tokyo City Univ., 3.ASET , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-3] Mn₂O₃ Slurry Reuse for SiO₂ Film CMP

S. Kishii^1,3, K. Nakamura¹, K. Hanawa², S. Watanabe¹, Y. Arimoto¹, S. Kurokawa³, T. K. Doi³ (1.Fujitsu Labs. Ltd.,, 2.Showa Denko K.K., 3.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-4] Optimum Design of MEMS Resonator Array to Measure the Young's Modulus of Nano-Scale Thin Films for the Reliability of Semiconductor Devices

H. Yamagiwa¹, S. Ito¹, T. Namazu^1,2, T. Takeuchi³, K. Murakami³, Y. Kawashimo³, T. Takano⁴ (1.Univ. of Hyogo, 2.PRESTO-JST, 3.Shinko Seiki Co., Ltd., 4.The New Industry Research Organization , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-5] A New Technique for in-Plane Poisson's Ratio Measurement of Thin Films - Cases of Single-Crystal Silicon and Aluminum Thin Films -

T. Fujii¹, T. Namazu^1,2, M. Takahashi¹, M. Tanaka¹, K. Yoshiki¹, S. Inoue¹ (1.Univ. of Hyogo, 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-6] Evolution of Wafer Shape and Localized Stress of Silicon Surrounded by Through Silicon Via Patterns along Various Process Integration Steps

C. H. Lee¹, S. H. Jie¹, S. H. Son¹, J. T. Kim¹, H. W. Yoo¹, I. K. Han¹, W. S. Yoo² (1.Hynix Semiconductor Inc. , Korea, 2.WaferMasters, Inc. , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-7] Improvement of the BCB Adhesion on Cr/Au Metal Layer for RF Packaging Module

N. Jeon¹, Y. H. Oh¹, Y. Ryoo¹, K. S. Seo¹ (1.Seoul National Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-8] Testkey Design of Through Silicon Vias (TSVs) for Accurate De-embedding and RF Model Parameters Extraction

J. Y. Wang¹, T. K. Huang¹, Y. C. Wu¹, S. S. H. Hsu¹, Z. H. Lin², C. S. Lin², S. S. Sheu², T. K. Ku², C. H. Lin² (1.National Tsing Hua Univ., 2.ITRI , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-2-9] Study of Local Charging Phenomena during SiO₂ Contact Hole Etching

T. Yagisawa¹, T. Tatsumi², T. Makabe¹ (1.Keio Univ., 2.Sony Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download