[E-1-2] Analytical Formulas for the Drain Current of Silicon Nanowire MOSFET

K. Natori¹ (1.Tokyo Inst. Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-3] Extraction of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire MOSFETs

K. Mao¹、T. Saraya¹、T. Hiramoto¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-4] High performance nanoscale n-MOS gate-all-around poly-Si thin film transistors by microwave annealing

M. S. Yeh¹、Y. C. Wu¹、Z. Y. Tang¹、H. F. Hung¹、Y. J. Lee² (1.Univ. of National Tsing Hua、2.National Nano Device Labs , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-5] Systematic Study of Back-Gate Bias Effects in Ultrathin-BOX Tri-gate (UTBT) Transistor with 10nm-Diameter Nanowire Channel

K. Ota¹、M. Saitoh¹、C. Tanaka¹、T. Numata¹ (1.Toshiba Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-1] Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

N. Horiguchi¹、G. Zschaetzsch¹、Y. Sasaki¹、A. K. Kambham¹、M. Togo¹、L.-Å. Ragnarsson¹、J. Mitard¹、J. Franco¹、G. Eneman¹、G. Hellings¹、L. Witters¹、T. Romeo¹、L. Pantisano¹、N. Waldron¹、D. Lin¹、N. Collaert¹、W. Vandervorst¹、A. Thean¹ (1.Inst. voor Ker and Stralings Fysika , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-2] Investigation and Comparison of Work Function Variation for FinFET and Ultra-Thin-Body SOI Devices Using a Voronoi Approach

S. H. Chao¹、M. L. Fan¹、P. Su¹ (1.Univ. of National Chiao Tung , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-3] Impact of Junction Non-abruptness on Random Discrete Dopant Induced Variability in Intrinsic Channel Tri-gate MOSFETs

K. L. Wei¹、X. Y. Liu¹、G. Du¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-4] 2D and 3D Fully-Depleted Extension-less Devices for Advanced Logic and Memory Applications

A. Veloso¹、A. De Keersgieter¹、M. Aoulaiche¹、M. Jurczak¹、A. Thean¹、N. Horiguchi¹ (1.IMEC , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-5L] The impact of Side Surface Roughness on Carrier Mobility in Tri-Gate Silicon Nanowire MOSFETs

K. Mao¹、T. Saraya¹、T. Hiramoto¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-1] III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS

S. Takagi¹、S. H. Kim¹、R. Zhang¹、M. Yokoyama¹、N. Taoka^1,2、M. Takenaka¹ (1.Univ. of Tokyo、2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード