[G-6-03] Oxygen vacancy distribution control for resistive switching of epitaxial TiO_2-xthin films in four-terminal memristive devices

^○R. Miyake¹, Z. Nagata¹, T. Tohei¹, A. Sakai¹ (1.Osaka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:30 〜 11:45 |PDF ダウンロード

[G-6-04] Comprehensive Study of Metal-Induced Layer-Exchange for High-Quality Multilayer Graphene

^○H. Murata^1,2, Y. Nakajima¹, T. Suemasu¹, K. Toko¹ (1.Univ. of Tsukuba (Japan), 2.JSPS Res. Fellow (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:45 〜 12:00 |PDF ダウンロード

[H-1-01 (Invited)] Nanofilaments in Ta-O ReRAM Bit Array Fabricated Using 40 nm CMOS Process

^○M. Arita¹, A. T.-Fukuchi¹, Y. Takahashi¹, S. Muraoka², S. Ito², S. Yoneda² (1.Hokkaido Univ. (Japan), 2.Panasonic Semiconductor Solutions Co., Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:00 〜 14:30 |PDF ダウンロード

[H-1-02] 3x Improved Set-voltage Variability of Cu Atom Switch with Split-electrode for Very Large Scale Integration

^○N. Banno¹, K. Okamoto¹, H. Numata¹, N. Iguchi¹, M. Miyamura¹, R. Nebashi¹, X. Bai¹, H. Hada¹, T. Sugibayashi¹, T. Sakamoto¹, M. Tada¹ (1.NEC Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:30 〜 14:45 |PDF ダウンロード

[H-1-03] HfO_x/Al₂O₃ Bilayer RRAM with Enhanced Endurance and Synaptic Behavior with Highly Stable Potentiation/ Depression Operation

^○E.Y.-J. Lee¹, K.-C. Chuang¹, H.-C. Cheng¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:45 〜 15:00 |PDF ダウンロード

[H-1-04] Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner

^○N. Guillaume¹, M. Azzaz¹, S. Blonkowski^1,3, E. Jalaguier¹, P. Gonon², C. Vallée², T. Blomberg⁴, M. Tuominen⁴, H. Sprey⁵, S. Bernasconi¹, C. Charpin-Nicolle¹, E. Nowak¹ (1.CEA LETI (France), 2.LTM (France), 3.STMicroelectronics (France), 4.ASM Microchemistry (Netherlands), 5.ASM Belgium (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:00 〜 15:15 |PDF ダウンロード

[H-1-05] 85% Endurance Error Reduction by Changing Reset Voltage in 40nm TaO_X-based ReRAM

^○H. Kinoshita¹, S. Fukuyama¹, T. Yonai¹, R. Yasuhara², K. Takeuchi¹ (1.Chuo Univ. (Japan), 2.Panasonic Semiconductor Solutions Co., Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:15 〜 15:30 |PDF ダウンロード

[H-2-01] Endurance Improvement in Ferroelectric Y-doped HfO₂ Thin Films on NiSi₂ with Low-Thermal Budget Processing

^○J. Molina Reyes^1,2, T. Hoshii¹, S.-I. Ohmi¹, H. Funakubo¹, A. Hori¹, I. Fujiwara¹, H. Wakabayashi¹, K. Tsutsui¹, K. Kakushima¹ (1.Tokyo Tech (Japan), 2.Nat. Inst. of Astro. Opt. and Elect. (Mexico))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:45 〜 16:00 |PDF ダウンロード

[H-2-02] Interface dipole modulation in ALD HfO₂/SiO₂ multi-stack MOS structures

^○S. Asanuma¹, K. Sumita¹, Y. Miyaguchi², K. Horita², T. Jimbo², K. Saito², N. Miyata¹ (1.AIST (Japan), 2.ULVAC Incorporated (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:00 〜 16:15 |PDF ダウンロード

[H-2-03] Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FET Based synapse for neuromorphic network

^○Y. Peng¹, W. Xiao², G. Han¹, Y. Liu¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ. (China), 2.Xiangtan Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:15 〜 16:30 |PDF ダウンロード