Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20a-233-1~9] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Thu. Sep 20, 2018 9:30 AM - 11:45 AM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[20a-233-1] Visualization of Temperature Distribution in Molten Silicon by Atmospheric Pressure Thermal Plasma Jet

〇Yuri Mizukawa¹, Hanafusa Hiroaki¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

9:45 AM - 10:00 AM

[20a-233-2] Analyses of As doped in Si activated and deactivated by flash lamp annealing and post annealing using soft X-ray photoelectron spectroscopy

〇(M2)Tatsuhiro Ogawa¹, Kotaro Natori¹, Takuya Hoshii¹, Masashi Nakatake², Yoshio Watanabe², Tutomu Nagayama³, Takahiro Higuchi³, Shinichi Kato⁴, Hideaki Tanimura⁴, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.Aichi SR, 3.Nissin Ion, 4.SCREEN)

10:00 AM - 10:15 AM

▼ [20a-233-3] Change of Raman Scattering as a Function of Laser Power in Si-Films Crystallized by CLC

〇(M2)Muhammad Arif Razali, Nobuo Sasaki^2,1, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Sasaki Consulting)

10:15 AM - 10:30 AM

[20a-233-4] Electrical Properties of LTPS Thin Films after Excimer Laser Doping with H3PO4 Thin Films

〇Kaname Imokawa^1,2, Nozomu Tanaka¹, Akira Suwa^1,2, Daisuke Nakamura¹, Taizoh Sadoh¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Department of Gigaphoton Next GLP, Kyushu Univ., 3.Tohoku Univ.)

10:30 AM - 10:45 AM

△ [20a-233-5] Grain Growth Control of LTPS Thin Films by Selective Laser Annealing

〇(B)Takahiro Yamada¹, Kaname Imokawa^1,2, Daisuke Nakamure¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ., 3.Tohoku Univ.)

10:45 AM - 11:00 AM

[20a-233-6] Effect of Laser Power on (100) Texture of Si Film Grown by CW laser Crystallization

〇Nobuo Sasaki^1,2, Muhammad Arif², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

11:00 AM - 11:15 AM

[20a-233-7] Crystallization of amorphous Ge aged at room temperature by flash-lamp annealing

〇Ryusuke Nakamura¹, Masayuki Okugawa¹, Akira Heya², Naoto Matsuo², Hidehiro Yasuda³ (1.Osaka Pref. Univ., 2.Univ. of Hyogo, 3.Osaka Univ.)

11:15 AM - 11:30 AM

[20a-233-8] Crystallization of sputter-deposited amorphous Si-Ge films

〇(D)Masayuki Okugawa¹, Ryusuke Nakamura¹, Hiroshi Numakura¹, Manabu Ishimaru², Hidehiro Yasuda³ (1.Osaka Pref. Univ., 2.Kyushu Inst. Univ., 3.Osaka Univ.)

11:30 AM - 11:45 AM

[20a-233-9] Micro rolling process on a silicon wafer surface

〇Kanna Aoki¹, Keita Ishiguro², Masaki Denokami², Yuya Tanahashi², Kentaro Furusawa¹, Norihiko Sekine¹, Tadafumi Adschiri³, Minoru Fujii² (1.NICT, 2.Kobe Univ., 3.Tohoku Univ.)

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