Oral presentation

[14a-B410-1~10] 3.13 Semiconductor optical devices

Sat. Mar 14, 2020 9:30 AM - 12:15 PM B410 (2-410)

Masakazu Arai(Univ. of Miyazaki), Kiyoto Takahata(Waseda univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[14a-B410-1] Development of AlGaN-based ultra-high UV(260nm)/VIS rejection photodetector

〇Tadao Tanabe¹, Takahiro Okumura¹, Mizuki Tanaka¹, Ryuichi Toba², Takahiro Ohashi², Yutaka Oyama¹ (1.Tohoku Univ. Eng., 2.Tohoku Univ. environment)

9:45 AM - 10:00 AM

△ [14a-B410-2] Spectral Responsivity Characteristics of FSI InGaAs PhotoFETs

〇(B)Kazuaki Oishi^1,2, Hiroyuki Ishii², Chang Wen Hsin², Tetsuji Shimizu², Hiroto Ishii^1,2, Akira Endoh¹, Hiroki Fujishiro¹, Tatsuro Maeda^1,2 (1.TUS, 2.AIST)

10:00 AM - 10:15 AM

[14a-B410-3] Improvement of solar cell efficiency using Al-doped ZnO / TiO2 nanorods

〇Hiroto Ando¹, Mitsuru Inada¹ (1.Kansai Univ.)

10:15 AM - 10:30 AM

▼ [14a-B410-4] An FPGA-Based Real-Time Signal Processing for SOI MOSFET Single-Photon Detector

〇(D)REVATHI MANIVANNAN¹, HIROAKI SATOH², HIROSHI INOKAWA^1,2 (1.GSST, Shizuoka Univ., 2.RIE, Shizuoka Univ.)

10:30 AM - 10:45 AM

[14a-B410-5] Resonance modes sensitive to the asymmetry of cavity shape

〇Takehiro Fukushima¹ (1.Okayama Pref. Univ.)

11:00 AM - 11:15 AM

△ [14a-B410-6] Analysis of small signal responses of 1.3-µm membrane distributed reflector lasers on a SiC substrate

〇Suguru Yamaoka¹, Ryo Nakao¹, Takuro Fujii¹, Koji Takeda¹, Tatsurou Hiraki¹, Hidetaka Nishi¹, Nikolaos-Panteleimon Diamantopoulos¹, Takaaki Kakitsuka¹, Tai Tsuchizawa¹, Shinji Matsuo¹ (1.NTT Device Technology Labs.)

11:15 AM - 11:30 AM

[14a-B410-7] Photoluminescence spectroscopy of selective MOVPE growth of GaInAsP/GaInAsP MQW structure on wafer bonded InP/Si substrate

〇(B)Kota Shibukawa¹, Koki Tsushima¹, xu Han¹, Takahiro Ishizaki¹, Masaki Matsuura¹, Takuto Shirai¹, Motonari Sato¹, Keta Fujiwara¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

11:30 AM - 11:45 AM

[14a-B410-8] Comparison of the Temperature Characteristics of Intermixed Quantum Dot LDs for Implanted Ions

〇Atsushi Matsumoto¹, Kouichi Akahane¹, Syohei Isawa², Runa Kaneko², Yuichi Matsushima², Katsuyuki Utaka² (1.NICT, 2.Waseda Univ.)

11:45 AM - 12:00 PM

△ [14a-B410-9] InGaAs/InAlAs multiple quantum well optical modulator integrated with planar antenna for 60-GHz band radio over fiber technology

〇Yusuke Miyazeki¹, Hiroto Yokohashi², Shotaro Kodama², Hiroshi Murata², Taro Arakawa¹ (1.Yokohama Nat'l Univ., 2.Mie Univ.)

12:00 PM - 12:15 PM

[14a-B410-10] Proposal of Quantum Well Microring Phase Modulator with Antenna-Coupled Electrodes

〇(M1)Hiro Kamada¹, Taro Arakawa¹ (1.Yokohama National Univ.)

Oral presentation

[15p-B410-1~11] 3.13 Semiconductor optical devices

Sun. Mar 15, 2020 1:15 PM - 4:45 PM B410 (2-410)

Tomoyuki Miyamoto(Tokyo Tech), Kouichi Akahane(NICT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 2:00 PM

[15p-B410-1] [The 20th JSAP Outstanding Achievement Award Speech] Advanced research of lattice-matched red AlGaAs/GaAs lasers at room temperature and contribution of pratical use of semicouductor lasers by first mode-stabilized TJS structure

〇Wataru Susaki¹ (1.OECU)

2:00 PM - 2:15 PM

[15p-B410-2] Evaluation of heat dissipation of quantum cascade laser by simulations and structure functions

〇Shigeyuki Takagi¹, Hirotaka Tanimura¹, Tsutomu Kakuno², Rei Hashimoto², Kei Kaneko², Shinji Saito² (1.Tokyo Univ. of Tech., 2.Toshiba)

2:15 PM - 2:30 PM

[15p-B410-3] Mode-locked laser diodes by using highly stacked InAs quantum dots

〇Kouichi Akahane, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹ (1.NICT)

2:30 PM - 2:45 PM

[15p-B410-4] Narrow-divergence emission from GaN-based blue VCSELs

〇KENTARO HAYASHI¹, HIROSHI NAKAJIMA¹, MASAMICHI ITO¹, MASAYUKI TANAKA¹, SHOETSU NAGANE¹, TATSUROU JYOKAWA¹, TATSUYA MATOU¹, NORIKO KOBAYASHI¹, OHARA MAHO¹, HIDEKI WATANABE¹, YASUTAKA HIGA¹, TATSUSHI HAMAGUCHI¹, RINTARO KODA¹, KATSUNORI YANASHIMA¹ (1.Sony Corporation)

2:45 PM - 3:00 PM

[15p-B410-5] 1.06 μm wavelength band InAs and InGaAs QD lasers

〇JINKWAN KWOEN¹, MASAHIRO KAKUDA¹, WATANABE KATSUYUKI¹, YASUHIKO ARAKAWA¹ (1.Univ. Tokyo)

3:15 PM - 3:30 PM

[15p-B410-6] Electrode shape dependence of characteristics of InGaP photovoltaic devices

〇Keisuke Oishi¹, Shinnosuke Tsuboyama¹, Kensuke Hiwada¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

3:30 PM - 3:45 PM

▲ [15p-B410-7] Experimental analysis of focus effect on power generation characteristics of
optical wireless power transmission when obliquely irradiated

〇(M1)Jing Tang¹, Tomoyuki Miyamoto¹ (1.Tokyo Tech)

3:45 PM - 4:00 PM

▼ [15p-B410-8] LED-based Optical Wireless Power Transmission System for Long Distance Operation

〇(D)Yuhuan Zhou¹, Tomoyuki Miyamoto¹ (1.Tokyo Tech)

4:00 PM - 4:15 PM

▲ [15p-B410-9] Research on LED-array Optical Wireless Power Transmission System Designing

〇(D)Yuhuan Zhou¹, Tomoyuki Miyamoto¹ (1.Tokyo Tech)

4:15 PM - 4:30 PM

[15p-B410-10] Characterization of 3D controlled resistance and absorption for high-efficiency VCSEL
by proton implantation

〇(M2)Hayato Sakamoto¹, Tomoyuki Miyamoto¹ (1.FIRST,Tokyo Tech)

4:30 PM - 4:45 PM

▲ [15p-B410-11] >1 W Power and 10 MHz Data Transmission in Hybrid Free Space Optical Communication and Optical Wireless Power Transmission

〇(DC)Alexander William Setiawan Putra¹, Hirotaka Kato¹, Takeo Maruyama¹ (1.Kanazawa Univ.)

Poster presentation

[14p-PB2-1~11] 3.13 Semiconductor optical devices

Sat. Mar 14, 2020 1:30 PM - 3:30 PM PB2 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[14p-PB2-1] Room temperature lasing of buried heterostructure GaInAsP/GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

〇Koki Tsushima¹, Xu Han¹, Takahiro Ishizaki¹, Masaki Matsuura¹, Takuto Shirai¹, Kota Shibukawa¹, Keita Fujiwara¹, Motonari Sato¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[14p-PB2-2] Lasing characteristics of GaInAsP / GaInAsP strained MQW laser diode
on wafer bonded InP/Si substrate

〇Takahiro Ishizaki¹, Xu Han¹, Masaki Matsuura¹, Koki Tsushima¹, Takuto Shirai¹, Keita Fujiwara¹, Motonari Sato¹, Kota Shibukawa¹, Kazuhiko shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[14p-PB2-3] InAs Quantum dots with strain compensation layer grown on directly bonded InP/Si substrate

〇(M1C)Takuto Shirai¹, Xu Han¹, Takahiro Ishizaki¹, Koki Tsushima¹, Kota Shibukawa¹, Keita Fujiwara¹, Motonari Sato¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[14p-PB2-4] Lasing characteristics of MQW lasers with double surface electrodes on wafer bonded InP/SiO₂/Si substrate

〇Xu Han¹, Masak Matsuura¹, Koki Tsushima¹, Takahiro Ishizaki¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[14p-PB2-5] Annealing process dependence of directly bonded InP/Si substrate

〇(B)Motonari Sato¹, Takuto Shirai¹, Takahiro Ishizaki¹, Koki Tsushima¹, Kota Shibukawa¹, Keita Hujiwara¹, Xu Han¹, Masaki Matsuura¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

1:30 PM - 3:30 PM

[14p-PB2-6] Detection of Defect Levels in UV-LEDs by Combining Current Injection and Optical Excitation

〇Sota Shirai¹, Natsuki Chiyoda¹, Norihiko Kamata¹, Yuri Itokazu^1,2, Syunta Yamahatsu^1,2, Hideki Hirayama² (1.Saitama Univ., 2.RIKEN)

1:30 PM - 3:30 PM

[14p-PB2-7] Effects of an electron blocking layer on the dark current reduction in the carrier multiplication-type c-Se-stacked 8K CMOS image sensors

〇Shigeyuki Imura¹, Keitada Mineo¹, Toshiki Arai¹, Toshihisa Watabe¹, Kazunori Miyakawa¹, Misao Kubota¹, Keisuke Nishimoto², Mutsumi Sugiyama², Masakazu Nanba¹ (1.NHK STRL, 2.Tokyo Univ. of Sci.)

1:30 PM - 3:30 PM

▲ [14p-PB2-8] Effect of reaction time on structural and enhanced electrical properties of h-WO₃nanostructures for UV photodetector applications

〇(D)Madhumitha Chinnasamy¹, Karthikeyan Balasubramanian¹ (1.NIT Trichy, India)

1:30 PM - 3:30 PM

[14p-PB2-9] Effects of layered ZnSe/ZnS:Mn/ZnS core/shell nanoparticles on Si Solar Cells

〇Yuki Idutsu¹, Liang Jianbo¹, Nishimura Hisaaki¹, Kim DaeGwi¹, Shigekawa Naoteru¹ (1.Osaka City Univ.)

1:30 PM - 3:30 PM

[14p-PB2-10] Improvement of avalanche photodiode fill factor using rounded square layout

〇Masahiro Akiyama¹, Nobuhiro Watanabe¹ (1.National Institute of Technology, Nagano College)

1:30 PM - 3:30 PM

[14p-PB2-11] Ion-implantation conditions for InAs/GaAs quantum dot intermixing

〇Yu Hiraishi¹, Taisei Ito¹, Jinkwan Kwoen², Yuichi Matsushima¹, Hiroshi ishikawa¹, Yasuhiko Arakawa², Katsuyuki Utaka¹ (1.Waseda Univ., 2.NanoQuine. Univ. of Tokyo)

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[14a-B410-1~10] 3.13 Semiconductor optical devices

[14a-B410-1] Development of AlGaN-based ultra-high UV(260nm)/VIS rejection photodetector

△ [14a-B410-2] Spectral Responsivity Characteristics of FSI InGaAs PhotoFETs

[14a-B410-3] Improvement of solar cell efficiency using Al-doped ZnO / TiO2 nanorods

▼ [14a-B410-4] An FPGA-Based Real-Time Signal Processing for SOI MOSFET Single-Photon Detector

[14a-B410-5] Resonance modes sensitive to the asymmetry of cavity shape

△ [14a-B410-6] Analysis of small signal responses of 1.3-µm membrane distributed reflector lasers on a SiC substrate

[14a-B410-7] Photoluminescence spectroscopy of selective MOVPE growth of GaInAsP/GaInAsP MQW structure on wafer bonded InP/Si substrate

[14a-B410-8] Comparison of the Temperature Characteristics of Intermixed Quantum Dot LDs for Implanted Ions

△ [14a-B410-9] InGaAs/InAlAs multiple quantum well optical modulator integrated with planar antenna for 60-GHz band radio over fiber technology

[14a-B410-10] Proposal of Quantum Well Microring Phase Modulator with Antenna-Coupled Electrodes

[15p-B410-1~11] 3.13 Semiconductor optical devices

[15p-B410-1] [The 20th JSAP Outstanding Achievement Award Speech] Advanced research of lattice-matched red AlGaAs/GaAs lasers at room temperature and contribution of pratical use of semicouductor lasers by first mode-stabilized TJS structure

[15p-B410-2] Evaluation of heat dissipation of quantum cascade laser by simulations and structure functions

[15p-B410-3] Mode-locked laser diodes by using highly stacked InAs quantum dots

[15p-B410-4] Narrow-divergence emission from GaN-based blue VCSELs

[15p-B410-5] 1.06 μm wavelength band InAs and InGaAs QD lasers

[15p-B410-6] Electrode shape dependence of characteristics of InGaP photovoltaic devices

▲ [15p-B410-7] Experimental analysis of focus effect on power generation characteristics of
optical wireless power transmission when obliquely irradiated

▼ [15p-B410-8] LED-based Optical Wireless Power Transmission System for Long Distance Operation

▲ [15p-B410-9] Research on LED-array Optical Wireless Power Transmission System Designing

[15p-B410-10] Characterization of 3D controlled resistance and absorption for high-efficiency VCSEL
by proton implantation

▲ [15p-B410-11] >1 W Power and 10 MHz Data Transmission in Hybrid Free Space Optical Communication and Optical Wireless Power Transmission

[14p-PB2-1~11] 3.13 Semiconductor optical devices

[14p-PB2-1] Room temperature lasing of buried heterostructure GaInAsP/GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

[14p-PB2-2] Lasing characteristics of GaInAsP / GaInAsP strained MQW laser diode
on wafer bonded InP/Si substrate

[14p-PB2-3] InAs Quantum dots with strain compensation layer grown on directly bonded InP/Si substrate

[14p-PB2-4] Lasing characteristics of MQW lasers with double surface electrodes on wafer bonded InP/SiO₂/Si substrate

[14p-PB2-5] Annealing process dependence of directly bonded InP/Si substrate

[14p-PB2-6] Detection of Defect Levels in UV-LEDs by Combining Current Injection and Optical Excitation

[14p-PB2-7] Effects of an electron blocking layer on the dark current reduction in the carrier multiplication-type c-Se-stacked 8K CMOS image sensors

▲ [14p-PB2-8] Effect of reaction time on structural and enhanced electrical properties of h-WO₃nanostructures for UV photodetector applications

[14p-PB2-9] Effects of layered ZnSe/ZnS:Mn/ZnS core/shell nanoparticles on Si Solar Cells

[14p-PB2-10] Improvement of avalanche photodiode fill factor using rounded square layout

[14p-PB2-11] Ion-implantation conditions for InAs/GaAs quantum dot intermixing

Authentication

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[14a-B410-1~10] 3.13 Semiconductor optical devices

△ [14a-B410-2] Spectral Responsivity Characteristics of FSI InGaAs PhotoFETs

▼ [14a-B410-4] An FPGA-Based Real-Time Signal Processing for SOI MOSFET Single-Photon Detector

△ [14a-B410-6] Analysis of small signal responses of 1.3-µm membrane distributed reflector lasers on a SiC substrate

△ [14a-B410-9] InGaAs/InAlAs multiple quantum well optical modulator integrated with planar antenna for 60-GHz band radio over fiber technology

[15p-B410-1~11] 3.13 Semiconductor optical devices

▲ [15p-B410-7] Experimental analysis of focus effect on power generation characteristics ofoptical wireless power transmission when obliquely irradiated

▼ [15p-B410-8] LED-based Optical Wireless Power Transmission System for Long Distance Operation

▲ [15p-B410-9] Research on LED-array Optical Wireless Power Transmission System Designing

▲ [15p-B410-11] >1 W Power and 10 MHz Data Transmission in Hybrid Free Space Optical Communication and Optical Wireless Power Transmission

[14p-PB2-1~11] 3.13 Semiconductor optical devices

▲ [14p-PB2-8] Effect of reaction time on structural and enhanced electrical properties of h-WO3 nanostructures for UV photodetector applications

Authentication

▲ [15p-B410-7] Experimental analysis of focus effect on power generation characteristics of
optical wireless power transmission when obliquely irradiated

▲ [14p-PB2-8] Effect of reaction time on structural and enhanced electrical properties of h-WO₃nanostructures for UV photodetector applications