[E-3-1] Materials Design for the Development of ZnO-Based Devices

Tetsuya Yamamoto (1.Associate Professor, Department of Electronic and Photonic Systems Engineering, Kochi University of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-3-2] Atomistic Crystal Growth Process of Metal Oxide Electronics Materials: Theoretical Simulation Studies

Momoji Kubo, Toshiyuki Yokosuka, Hitoshi Kurokawa, Ken Suzuki, Seiichi Takami, Akira Miyamoto, Masashi Kawasaki, Mamoru Yoshimoto, Hideomi Koinuma (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, 2.Institute for Materials Research, Tohoku University, 3.Materials and Structures Laboratory, Tokyo Institute of Technology, 4.CREST-JST and Materials and Structures Laboratory, Tokyo Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-3-3] Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE

Daisuke Okada, Hiroyuki Hasegawa, Yoshiji Horikoshi Tadashi Saitoh (1.School of Science and Engineering, Waseda University, 2.NTT Basic Research Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-3-4] Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth

Toyonori Kusuhara, Fumito Nakajima, Junichi Motohisa, Takashi Fukui (1.Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-3-5] Fabrication of Quantum Dots for Wavelength Converter Using Four-Wave Mixing

Kouichiro Yamazaki, Ryuuji Fukuoka, Kazuhiko Shimomura (1.Department of Electrical and Electronics Engineering, Sophia University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-4-1] Growth and Characteristics of AlGaN/GaN HBTs

R. D. Dupuis, D. J. H. Lambert, U. Chowdhury, M. M. Wong, T. G. Zhu, B. S. Shelton, J. J. Huang, D. Caruth, M. Feng (1.The University of Texas at Austin, Microelectronics Research Center, 2.Microelectronics Laboratory, Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2] DC Characteristics of InP HBTs under High-Temperature and Bias Stress

Kenji Kurishima, Minoru Ida, Noriyuki Watanabe, Hiroki Nakajima, Yasuro Yamane, Eiichi Sano (1.NTT Photonics Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3] A Novel HBT with Composite Collector for Power Amplifier Application

Shih-Tzung Su, Kao-Way Tu, Ching-Lin Cheng, Feng-Tso Chien, Tuo-Hsin Chien, Jen-Huei Dung, Yue-Ming Hsin (1.R&D DEPT, Chino-Excel Technology Corp., 2.Department of Electrical Engineering, National Central University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-4-4] Optimization of Overgrown Ex-Situ Processed GaAs Interfaces for a Resonant Tunneling PBT

Erik Lind, Ines Pietzonka, Werner Seifert, Lars-Erik Wernersson (1.Solid State Physics, Lund University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-5-1] HBTs and HEMT Based on InGaP/GaAs Heterostructures

T. Kikkawa, Fujitsu Labs., Japan (1.Fujitsu Laboratories Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download