[C-10-5] A Novel Method for Extracting the Coupling Coefficient without a Reference Cell for a Split-Gate Flash EEPROM

H. Fujiwara, M. Arimoto, T. Kaida, S. Sudo, K. Kurooka, M. Hirase, T. Hiroshima, K. Mameno (1.Microelectronics Research Center, Sanyo Electric Co., Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions

Hiroshi Inokawa, Akira Fujiwara, Yasuo Takahashi (1.NTT Basic Research Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] Observation of Negative Differential Conductance and its Impact on Single-Electron-Transistor Characteristics

Y. Ono, Y. Takahashi (1.NTT Basic Research Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

Kyung Rok Kim, Dae Hwan Kim, Suk Kang Sung, Jong Duk Lee, Byung Gook Park, Bum Ho Choi, Sung Woo Hwang, Doyeol Ahn (1.Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul Nat'l Univ., 2.Institute of Quantum Information Processing and Systems (iQUIPS), University of Seoul)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor

Y. Gotoh, K. Matsumoto, M. Ishii, T. Maeda (1.Advanced Industrial Science and Technology, 2.Tsukuba University, 3.CREST)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-7-5] Fabrication of Single Electron Transistors on Hydrogen-Terminated Diamond Surface Using Atomic Force Microscope

Minoru Tachiki, Hokuto Seo, Tohru Fukuda, Kenta Sugata, Tokishige Banno, Hitoshi Umezawa, Hiroshi Kawarada (1.School of Science & Engineering, Waseda University, 2.CREST, Japan Science and Technology Corporation (JST))

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-7-6] Nano-Device Formation in a Multi-Wall Carbon Nanotube

Nobuhide Yoneya, Eiichirou Watanabe, Kazuhito Tsukagoshi, Yoshinobu Aoyagi (1.RIKEN, 2.Department of Physics, Science University of Tokyo, 3.Department of Information Processing, Tokyo Institute of Technology, 4.CREST, Japan Science and Technology (JST))

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Imaging Coherent Electron Flow

R. M. Westervelt, M. A. Topinka, B. J. LeRoy, S. E. J. Shaw, R. Fleischmann, E. J. Heller, K. D. Maranowski, A. C. Gossard (1.Division of Engineering and Applied Sciences, Department of Physics, and Department of Chemistry and Chemical Biology Harvard University, 2.Max-Planck-Institut fur Stromungsforschung, 3.Materials Department, University of California)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Nanometer-Scale Characteriazation by Scanning Tuneling Microscopy

G. Meyer, J. Repp, F. Moresco, S. W. Hla, S. Folsch, K. H. Rieder, H. Tang, A. Gourdon, C. Joachim (1.Paul-Drude-Institut fur Festkorperelektronik, 2.Institut fur Experimentalphysik, Freie Universitat Berlin, 3.CEMES-CNRS)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] Quantum Point Contact Switch using Solid Electrochemical Reaction

Tsuyoshi Hasegawa, Kazuya Terabe, Tomonobu Nakayama, Masakazu Aono (1.Senior Research Scientist, Surface and Interface Laboratory, RIKEN (The Institute of Physical and Chemical Research), 2.CREST, Japan Science & Technology Corporation (JST), 3.Department of Precision Science and Technology, Osaka University)

2001 International Conference on Solid State Devices and Materials |PDF Download