[P-1-13] Development of New Tight-Binding Molecular Dynamics Program to Simulate Chemical-Mechanical Polishing Processes

Toshiyuki Yokosuka, Hitoshi Kurokawa, Seiichi Takami, Momoji Kubo, Akira Miyamoto, Akira Imamura (1.Department of Materials Chemistry, Graduated School of Engineering, Tohoku University, 2.Department of Mathematics, Faculty of Engineering, Hiroshima Kokusai Gakuin University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-14] Optimization of Low Power Shallow Trench Isolation BiCMOS Technology for Mixed Anlog/Digital Application Systems

H. Nakajima, H. Kawai, C. Yoshino, H. Miyakawa, H. Sugaya, H. Takimoto, H. Nii, K. Inoh, Y. Katsumata, H. Ishiuchi (1.System LSI Research & Development Center, Semiconductor Company, Toshiba Corp., 2.Semiconductor Company, Toshiba Corp.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-15] Ultrathin Silicon Oxynitride Layers with a Low Leakage Current Density Formed by Plasma Nitridation Using Low Energy Electron Impact and Chemical Oxidation

Masao Takahashi, Masafumi Tamura, Akira Asano, Osamu Maida, Hikaru Kobayashi (1.The Institute of Scientific and Industrial Research, Osaka University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-16] Single Electron Transistor Using GaN Coupled Quantum Dots Formed on SiO2/Si Substrate

Koji Kawasaki, Daisuke Yamazaki, Masaki Suzuki, Kazuo Tsutsui, Yoshinobu Aoyagi (1.Tokyo Institute of Technology, Interdisciplinary Graduate School of Science & Engineering, 2.The Institute of Physical and Chemical Research (RIKEN), 3.CREST, JST (Japan Science and Technology))

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-17] Single Electron Memory with a Defined Poly-Si Dot Based on Conventional VLSI Technology

Suk-Kang Sung, Jae-Sung Sim, Dae Hwan Kim, Jong Duk Lee, Byung-Gook Park (1.Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-18] Optimisation of Tunnel Barriers for nc-Si Single-Electron Transistors

Y. T. Tan, T. Kamiya, Z. A. K. Durrani, H. Ahmed (1.Microelectronics Research Center, Cavendish Laboratory, University of Cambridge, 2.CREST)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-19] Three Dimensional Size Evaluation of Island in Si Single-Electron Transistor

M. Nagase, S. Horiguchi, A. Fujiwara, Y. Takahashi (1.NTT Basic Research Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-20] Conduction Mechanism in Extremely Thin Poly-Si Wires -Width Dependence of Coulomb Blockade Effect-

Kensaku Kawamura, Toshirou Kidera, Anri Nakajima, Shin Yokoyama (1.Research Center for Nanodevices and Systems, Hiroshima University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-21] High Frequency Applications of Polycrystalline Diamond Field-Effect Transistors

H. Umezawa, N. Fujihara, T. Arima, H. Taniuchi, H. Ishizaka, Y. Ohba, M. Tachiki, P. Koidl, H. Kawarada (1.Waseda University CREST, JST, 2.Fraunhofer Institut Angewandte Festkorperphysik)

2001 International Conference on Solid State Devices and Materials |PDF Download

[P-1-22] AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis

T. Maeda, Norihito Ozeki, Sigeru Kishimoto, Toshiki Sugai, Takashi Mizutani, Hisanori Shinohara (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, 2.Department of Chemistry, Graduate School of Science, Nagoya University)

2001 International Conference on Solid State Devices and Materials |PDF Download