[C-1-2] Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo (1.Research Centre for Micro-Structure Devices, Nagoya Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Elmination of Kink Phenomena in InP-Based HEMTs by Forming Direct Ohmic Contacts in the Channel

Ken Sawada, Tomoyuki Arai, Tsuyoshi Takahashi, Naoki Hara (1.Fujitsu Laboratories Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] Investigation of Low-Frequency Noise Behavior of In0.52Al0.48As/In0.60Ga0.40As Metamorphic High Electron Mobility Transistors

Jeong Hoon Kim, Hyung-Sup Yoon, Jin-Hee Lee, Kyung Ho Lee, Jong-In Song (1.Dept. of Information and Communications, K-JIST, 2.Microwave Devices Team, ETRI)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5] Theoretical and Experimental Study on Thermal Characteristics of InP/InGaAs Single Heterojunction Bipolar Transistors

Taeho Kim, Yongjoo Song, Hyun-Min Park, Moonjung Kim, Songcheol Hong, Kyounghoon Yang (1.Dept. of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology(KAIST))

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-1-6] A Trial of Dual Emitter HBT for MMIC Power Amplifier Application

Y. S. Lee, C. S. Park (1.School of Engineering, Information and Communications University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Evolution and Current Status of RF Semiconductor Devices

Juin J. Liou, Frank Schwierz (1.School of Electrical Engineering and Computer Science, University of Central Florida, 2.Fachgebiet Festkorperelektronik, Technische Universitat Ilmenau)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] A Low Distortion pHEMT with Newly Developed Composite Channel Structure

Yasunori Tateno, Masaki Nagahara, Jun-ichiro Nikaido, Tsutomu Igarashi, Heidarpour A. Ebrahim, Yasuhiro Nakasha, Kazukiyo Joshin (1.Fujitsu Quantum Devices Limited, 2.Fujitsu Laboratories Limited)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] A 2W High Efficiency 4-12 GHz GaAs HFET MMIC Power Amplifier

Hidenori Yukawa, Masatoshi Nii, Yoshihiro Tsukahara, Yasushi Itoh, Yukio Ikeda (1.Mitsubishi Electric Corporation, Information Technology R&D Center, 2.Mitsubishi Electric Corporation, Communication Systems Center, 3.Mitsubishi Electric Corporation, High Frequency & Optical Semiconductor Div.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] AlGaAs/GaAs PHEMT MMIC Broadband Power Amplifier from 17GHz to 36GHz for K/Ka-Band Applications

Y. C. Lee, C. S. Park (1.School of Engineering, Information and Communications University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Ku-Band Multi-Stage MMIC Low-Noise Amplifier Loaded with Doubl Gain-Equalizing Circuits

Koji Yamanaka, Kazunori Sugaya, Tetsuro Yamaguchi, Naoki Tanahashi, Yasushi Itoh, Tadashi Takagi (1.Mitsubishi Electric Corporation, Information Technology R&D Center)

2001 International Conference on Solid State Devices and Materials |PDF Download

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