[C-8-4] Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment

Kazushi Kodama, Mitsue Takahashi, Minoru Noda, Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[LC-2-1] A New Circuit Simulation Model of Ferroelectric Capacitors

Tetsuro Tamura, Yoshihiro Arimoto, Hiroshi Ishiwara (1.R&D Association for Future Electron Devices, c/o Ishiwara Lab., 2.Memory Device Lab., Fujitsu Laboratories Ltd., 3.Frontier Collaborative Research Center, Tokyo Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-9-1] Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current

Shigeyasu Uno, Kazuaki Deguchi, Yoshinari Kamakura, Kenji Taniguchi (1.Department of Electronics and Information Systems, Osaka University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-9-2] Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide

Tatsuya Usuki, Naoto Horiguchi, Toshiro Futatsugi (1.Fujitsu Laboratories Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-9-3] Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM TM Non-Volatile Semiconductor Memory Devices

Eli Lusky, Yosi Shacham-Diamand, Ilan Bloom Boaz Eitan (1.Ph. D Student, Tel-Aviv University, Dept. of Physical Electronics, 2.Saifun Semiconductors Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-9-4] Time Dependent Anomalous Charge Loss Modeling in Flash Memories and an Accelerated Testing Procedure

Franz Schuler, Georg Tempel, Hanno Melzner, Paul Hendrickx, Dirk Wellekens, Martino Lorenzini, Jan Van Houdt (1.Infineon Technologies AG, 2.IMEC vzw., 3.Kapeldreef 75, 4.Otto-Hahn-Ring)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] A New Two-Step Round Oxidation STI Technology for Highly Reliable Flash Memory

Naoki Ueda, Yoshimitsu Yamauchi, Tadahiro Ohmi (1.Process Development Laboratory, Sharp Corporation, 2.New Industry Creation Hatchery Center, Tohoku University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-10-2] Low-Voltage Embedded Flash-EEPROM in 0.18 μm CMOS

Do Dormans, Dick Boter, Antonio Cacciato, Margriet Diekema, Chantal Dijkstra, Marton Hendriks, Roelof van der Linde, Guoqiao Tao, Hein Valk, Erik van der Vegt, Rob Verhaar (1.Philips Semiconductors MOS4YOU)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] Macro Gate Current Model and Modeling Parameter Extraction of the SSI Flash Cell

Chun-Mai Liu, Ming-Bing Chang, Ping Guo, Albert V. Kordesch, Ben Lee, Kung-Yen Su (1.Winbond Electronics Corporation of America)

2001 International Conference on Solid State Devices and Materials |PDF Download

[C-10-4] A New Two-Transistor MACRO Modeling of Source Side Injection (SSI) Flash Cell Considering Remote-Electrode Induced Barrier Lowering (RIBL)

Sang-Pil Sim, Al Kordesch, Ben Lee, Chun-Mai Liu, Kwyro Lee, Cary Y. Yang (1.Microelectronics Lab., Santa Clara University, 2.Winbond Electronics Corp. America, 3.Dept. of EECS, Korea Advanced Institute of Science and Technology (KAIST))

2001 International Conference on Solid State Devices and Materials |PDF Download

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