[D-5-4] A Novel GaAs Binary Decision Diagram Device Having Quantum Wire Branch-Switches Controlled by Wrap Gates

Miki Yumoto, Seiya Kasai, Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-5-5] Characterization of Tunnel-Barriers in Polycrystalline Si Point-Contact Single-Electron Transistors

Y. Furuta, H. Mizuta, K. Nakazato, T. Kamiya, Y. T. Tan, Z. A. K. Durrani, K. Taniguchi (1.Hitachi Cambridge Laboratory, Hitachi Europe Ltd., 2.Microelectronics Research Centre, University of Cambridge, 3.Dept. of Electronics and Information Systems, Osaka University, 4.CREST, JST(Japan Science and Technology))

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-5-6] Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures

M. IKEDA, E. YOSHIDA, A. KOHNO, S. MIYAZAKI, M. HIROSE (1.Department of Electrical Engineering, Hiroshima University, 2.Department of Applied Physics, Fukuoka University, 3.National Institute of Advanced Industrial Science and Technology (AIST) Advanced Semiconductor Research Center)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] Direct Formation of GaAs/AlGaAs Quantum Dots by Droplet Epitaxy

Nobuyuki Koguchi (1.Nanomaterials Laboratory, National Institute for Materials Science)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-6-2] Optical Investigation of High-Density InGaAs/AlGaAs Quantum Wire by Constant MOCVD Growth

Noriaki Tsurumachi, Chang-Sik Son, Tae Geun Kim, Yasuyuki Takasuka, Mutsuo Ogura (1.National Institute of Advanced Industrial Science and Technology (AIST), 2.CREST-Japan Science and Technology Corporation (JST), 3.NEDO, 4.Shibaura Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-6-3] Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time

Naoki Matsumura, Tetsuya Haga, Shunichi Muto, Yoshiaki Nakata, Naoki Yokoyama, Ken Numata, Konami Yabuta (1.Department of Applied Physics, Hokkaido University, 2.Fujitsu Laboratories Ltd., 3.Kanagawa High-Technology Foundation)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] Light-Illuminated STM Studies on InAs Nano-Structures

Kan Takada, Misaichi Takeuchi, Takuji Takahashi (1.Institute of Industrial Science, University of Tokyo, 2.Semiconductor Research Laboratory, The Institute of Physical and Chemical Research (RIKEN))

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-6-5] Structural and Optical Properties of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate

Chao Jiang, Tsutomu Muranaka, Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-6-6] Reactive Ion Beam Etching of GaN and AlGaN for Nano-structure Fabrication Using Methane-Based Gas Mixtures

Makoto Endo, Zhi Jin, Seiya Kasai, Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering Hokkaido University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[D-6-7] Strain Engineering for Control of Self-Organized Quantum Nanostructures

Toshio Ogino, Hiroo Omi, David Bottomley, Koji Sumitomo, Zhaohui Zhang (1.NTT Basic Research Laboratories, 2.Mesoscopic Physics National Laboratory and Department of Physics, Peking University)

2001 International Conference on Solid State Devices and Materials |PDF Download