[E-5-2] Robust 0.13-μm Gate HJFET with Low Fringing Capacitance

Takashi Inoue, Akio Wakejima, Katsumi Yamanoguchi, Norihiko Samoto (1.Photonic and Wireless Devices Research Labs., 2.R&D Technical Support Center, NEC Corporation)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-5-3] Lateral p-n Junction in High Electron-Mobility Structure

B. Kaestner, D. G. Hasko, D. A. Williams (1.Microelectronics Research Centre, Cavendish Laboratory, 2.Hitachi Cambridge Laboratory, Cavendish Laboratory)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-5-4] A Depletion-Mode In0.53Ga0.47As MOSFET with a Liquid Phase Oxidized Gate

Shin-Jae Kang, Jae-Chun Han, Sung-June Jo, Jeong Hoon Kim, Sung-Woong Park, Jong-In Song (1.Department of Information and Communications, K-JIST, 2.NEOPTEK)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-5-5] InGaP/InGaAs p-HEMTs Having Channel Layers Over the Critical Layer Thickness Grown on Patterned GaAs Substrates

Sung-June Jo, Jeong Hoon Kim, Sang-Soon Kim, Jong-In Song (1.Department of Information and Communications, K-JIST, 2.R&D Group1, Mobile Communication Division, Samsung Electronics)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-5-6] Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide, Mitsuaki Shimizu, Akira Suzuki, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto (1.Department of Science and Technology, Graduated School of Meiji University, 2.National Institute of Advanced Industrial Science and Technology, 3.Graduate School of Engineering, Tokai University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-5-7] SiC/SiO2 Structure Formed at ～200℃ with Excellent Electrical Characteristics

Takeaki Sakurai, Jong Wook Park, Yasushiro Nishioka, Masayoshi Nishiyama, Hikaru Kobayashi (1.Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Corporation, 2.Tsukuba Research and Development Center, Japan Texas Instruments, 3.Central Workshop, Osaka University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-6-1] Application of InAs Free-Standing Membranes for Electromechanical Systems

Hiroshi Yamaguchi, Remi Dreyfus, Sen Miyashita, Yoshiro Hirayama (1.NTT Basic Research Laboratories, 2.Ecole Superierure de Physique et de Chimie Industrielles de la ville de Paris, 3.NTT Advanced Technology, 4.Core Research for Evolutional Science & Technology (CREST), JST)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-6-2] N/Ge Co-Implantation into GaN for N-Type Doping

Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo (1.Toyota Central Research and Development Laboratories, Inc., 2.Department of Environmental Technology and Urban Planning, 3.Research Center for Micro-Structure Devices, Nagoya Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-6-3] Influence of the Ferroelectric Polarization on the Properties of the Two-Dimensional Electron Gas in Pb(Zr0.53Ti0.47)O3/AlxGa1-xN/GaN Structures

B. Shen, W. P. Li, X. S. Wang, Z. X. Bi, R. Zhang, Y. G. Zhou, F. Yan, Y. Shi, Z. G. Liu, Y. D. Zheng, T. Someya, Y. Arakawa (1.National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 2.Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4] Investigation of the Polarization-Induced Charges in Modulation-Doped Alx- Ga1-xN/GaN Heterostructures through Capacitance-Voltage Profiling and Simulation

Y. G. Zhou, B. Shen, H. Q. Yu, R. Zhang, Y. D. Zheng, T. Someya, Y. Arakawa (1.National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 2.Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo)

2001 International Conference on Solid State Devices and Materials |PDF Download