[E-2-2] Photo-Carrier Induced Magnetism in III-V Magnetic Alloy Semiconductor Heterostructures

A. Oiwa, T. Slupinski, H. Munekata (1.Kanagawa Academy of Science and Technology, 2.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Characterization of Ferromagnetic Electrodes for Spin Injection into Semiconductor Using Local Hall Effect

J. Nitta, Th. Schapers, H. B. Heersche, T. Koga, Y. Sato, H. Takayanagi (1.NTT Basic Research Laboratories, 2.Institut fur Schichten und Grenzflachen, Forschungszentrum Julich, 3.Department of Applied Physics and Material Research Center, University of Groningen, 4.Center for New Material, Japan Advanced Institute of Science and Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-2-4] Conditions for the Spin Rectification Phenomena Predicted for Semiconducting Triple Barrier Structures in the Presence of Rashba Spin-Orbit Coupling

Takaaki Koga, Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi (1.NTT Basic Research Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-2-5] Material Design and Growth of "Zinc-Blende CrAs"

Masaki Mizuguchi, Hiro Akinaga, Takashi Manago, Kanta Ono, Masaharu Oshima, Masafumi Shirai (1.Joint Research Center for Atom Technology (JRCAT), National Institute of Advanced Industrial Science and Technology (AIST), 2.Graduate School of Engineering, The University of Tokyo, 3.Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 4.Graduate School of Engineering Science, Osaka University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-2-6] Magnetic and Optical Properties of (Ga, Mn)N

T. Kondo, H. Owa, S. Kuwabara, H. Munekata (1.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-1-1] Carrier Transport of SiN Gate Dielectrics for Dual-Gate CMOSFETs

Hironobu Fukui, Mariko Takayanagi, Shinji Mori, Takashi Shimizu, Yoshiaki Toyoshima (1.System LSI Research & Development Center, Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-1-2] Saturation Phenomenon of Stress Induced Gate Leakage Current

S. Ueno, T. Kuroi, A. Teramoto, H. Umeda, Y. Inoue, M. Inuishi (1.ULSI Development Center, Mitsubishi Electric Corporation)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-1-3] Monitoring Degradation of Source/Drain Extension in Sub-Quarter-Micron MOSFET's

G. Chen, M. F. Li, X. M. Li, X. Yu (1.SNDL and CICFAR, Department of Electrical & Computer Engineering, National University of Singapore, 2.Chartered Semiconductor Manufacturing Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-1-4] Quantum Mechanical Analysis of Accumulation Layers in MOS Structures

Shin-ichi Saito, Kazuyoshi Torii (1.Hitachi, Ltd., Central Research Laboratory)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-1-5] Impact of Two-Dimensional Structure of nMOSFETs on Direct Tunnel Gate Current

Hiroshi Watanabe, Kazuya Matsuzawa, Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

2001 International Conference on Solid State Devices and Materials |PDF Download