[B-7-4] P-Doping into Strain-Induced Si1-yCy Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition

Shuhei Yagi, Katsuya Abe, Takashi Okabayashi, Akira Yamada, Makoto Konagai (1.Department of Physical Electronics, Tokyo Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films: Experimental Evaluation and Analysis of Nonlinearity

Naoki Yasuda, Kouichi Muraoka, Masahiro Koike, Hideki Satake (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-8-2] Defect Termination by Nitrogen Bonding due to NO Nitridation in MOS Structures

Keiko Kushida-Abdelghafar, Kikuo Watanabe, Takeshi Kikawa, Yoshiaki Kamigaki, Eiichi Murakami (1.Central Research Laboratory, Hitachi, Ltd., 2.Semiconductor and Integrated circuits Division, Hitachi Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Physical and Electrical Characteristics of Poly-Si/ZrO2/SiO2/Si MOS Structures

Kwan-Yong Lim, Dae-Gyu Park, Heung-Jae Cho, Joong-Jung Kim, Jun-Mo Yang, Il-Sang Choi, Jung-Kyu Ko, Jae-Young Kim, In-Seok Yeo, Jin Won Park, Hee-Koo Yoon (1.Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] Interfacial Reactions of ZrO2/SiO2/Si Layered Structures

Heiji Watanabe (1.Silicon Systems Research Laboratories, NEC Corporation)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-8-5] Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition

Satoshi Kitai, Osamu Maida, Takeshi Kanashima, Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 2.The Institute of Scientific and Industrial Research, Osaka University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] Low Leakage La2O3 Gate Insulator Film with EOTs of 0.8-1.2 nm

S. Ohmi, C. Kobayashi, E. Tokumitsu, H. Ishiwara, H. Iwai (1.Tokyo Institute of Technology)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Structural and Electrical Characteristics of HfO2 Films Fabricated by Pulsed Laser Deposition

Hiroya Ikeda, Satoru Goto, Kazutaka Honda, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima, Yukio Yasuda (1.Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, 2.Center for Cooperative Research in Advanced Science and Technology, Nagoya University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] Scanning Tunneling Microscopy Study of Hf Silicate Formed by Ulttrathin Hf Metal on SiO2:Effect of Hf/SiO2 Thickness Ratio

Jung-Ho Lee, Masakazu Ichikawa (1.Joint Research Center for Atom Technology, AIST)

2001 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing

Shin-Ichi Nakao, Munekatsu Nakagawa, Ichiro Ohshima, Hiroyuki Shimada, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

2001 International Conference on Solid State Devices and Materials |PDF Download

338 results (241 - 250)

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