The Japan Society of Applied Physics

2001 International Conference on Solid State Devices and Materials

2001 International Conference on Solid State Devices and Materials

Sep 26, 2001 - Sep 28, 2001
Diamond Hotel, Tokyo, Japan

338 results (81 - 90)

[A-4-1] Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation

Naoki Ueda, Yuji Saito, Masaki Hirayama, Yoshimitsu Yamauchi, Shigetoshi Sugawa, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.Process Development Laboratory, Sharp Corporation, 3.New Industry Creation Hatchery Center, Tohoku University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Improved Transconductance and Gate Insulator Integrity of MISFETs with Si3N4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃

Ichiro Ohshima, Hiroyuki Shimada, Shin-ichi Nakao, Weitao Cheng, Yasuhiro Ono, Masaki Hirayama, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Device Development Group, SEIKO EPSON Corporation, 3.New Industry Creation Hatchery Center, Tohoku University, 4.Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

2001 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] A Comparative Examination of Polyoxide Films Performance Grown by Conventional Dry Thermal (900℃) or Plasma Assisted (400℃) Oxidation Techniques

Fuminobu Imaizumi, Tatsufumi Hamada, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering Graduated school of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University, 3.Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

2001 International Conference on Solid State Devices and Materials |PDF Download

[A-4-5] A Study on the Germano-Silicide Formation in the Ni/Si1-xGex System for CMOS Device Applications

Hyo-Jick Choi, Dae-Hong Ko, Ja-Hum Ku, Chul-Joon Choi, Siyoung Choi, Kazuyuki Fujihara, Ho-Kyu Kang Cheol-Woong Yang (1.Department of Ceramic Engineering, Yonsei University, 2.Process Development Team Semiconductor R&D Division Samsung Electronics Co., 3.School of Metallurgical and Materials Engineering, Sungkyunkwan University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Ultrathin Nitrided-Nanolaminate (Al2O3/ZrO2/Al2O3) for Gate Dielectrics Application

S. Jeon, H. Yang, H. Chang, D. G. Park, K. Y. Lim, In-Seok Yeo, H. Koh, H. W. Yeom, Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 2.Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc., 3.Atomic-scale Surface Science Research Center, Institute of Physics & Applied Physics, Yonsei University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] New Charge Control Technology by Stencil Mask Ion Implantation

Takeshi Shibata, Kyoichi Suguro, Kazuyoshi Sugihara, Katsuya Okumura, Tsutomu Nishihashi, Kazuhiro Kashimoto, Junki Fujiyama, Yuzo Sakurada (1.Process & Manufacturing Engineering Center, Semiconductor Company Toshiba Corporation, 2.Ion implantation equipment div. 2, ULVAC Japan, Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si

T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama, T. Kusuda (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 2.Lamp Technology and Engineering Division, Ushio Inc., 3.Development Department for Electronics Equipment, Dainippon Screen MFG. Co. Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

338 results (81 - 90)